參數(shù)資料
型號(hào)： MPC8548VTAQH
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 32-BIT, 1000 MHz, MICROPROCESSOR, PBGA783
封裝： 29 X 29 MM, 1 MM PITCH, FLIP CHIP, LEAD FREE, PLASTIC, BGA-783
文件頁數(shù)： 62/142頁
文件大?。?/td> 1504K
代理商： MPC8548VTAQH
MPC8548E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 5
26
Freescale Semiconductor
Enhanced Three-Speed Ethernet (eTSEC)
8
Enhanced Three-Speed Ethernet (eTSEC)
This section provides the AC and DC electrical characteristics for the enhanced three-speed Ethernet
controller. The electrical characteristics for MDIO and MDC are specified in Section 9, “Ethernet
8.1
Enhanced Three-Speed Ethernet Controller (eTSEC)
(10/100/1Gb Mbps)—GMII/MII/TBI/RGMII/RTBI/RMII Electrical
Characteristics
The electrical characteristics specified here apply to all gigabit media independent interface (GMII), media
independent interface (MII), ten-bit interface (TBI), reduced gigabit media independent interface
(RGMII), reduced ten-bit interface (RTBI), and reduced media independent interface (RMII) signals
except management data input/output (MDIO) and management data clock (MDC). The RGMII and RTBI
interfaces are defined for 2.5 V, while the GMII, MII, and TBI interfaces can be operated at 3.3 or 2.5 V.
The GMII, MII, or TBI interface timing is compliant with the IEEE 802.3. The RGMII and RTBI interfaces
follow the Reduced Gigabit Media-Independent Interface (RGMII) Specification Version 1.3
(12/10/2000). The RMII interface follows the RMII Consortium RMII Specification Version 1.2
(3/20/1998). The electrical characteristics for MDIO and MDC are specified in Section 9, “Ethernet
8.1.1
eTSEC DC Electrical Characteristics
All GMII, MII, TBI, RGMII, RMII, and RTBI drivers and receivers comply with the DC parametric
attributes specified in Table 22 and Table 23. The RGMII and RTBI signals are based on a 2.5-V CMOS
interface voltage as defined by JEDEC EIA/JESD8-5.
Table 22. GMII, MII, RMII, and TBI DC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
Notes
Supply voltage 3.3 V
LVDD
TVDD
3.13
3.47
V
1, 2
Output high voltage (LVDD/TVDD = min, IOH = –4.0 mA)
VOH
2.40
LVDD/TVDD + 0.3
V
—
Output low voltage (LVDD/TVDD = min, IOL = 4.0 mA)
VOL
GND
0.50
V
—
Input high voltage
VIH
2.0
LVDD/TVDD + 0.3
V
—
Input low voltage
VIL
–0.3
0.90
V
—
Input high current (VIN = LVDD, VIN = TVDD)IIH
—40
μA
1, 2, 3
Input low current (VIN = GND)
IIL
–600
—
μA—
Notes:
1. LVDD supports eTSECs 1 and 2.
2. TVDD supports eTSECs 3 and 4.
3. The symbol VIN, in this case, represents the LVIN and TVIN symbols referenced in Table 1 and Table 2.
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