參數(shù)資料
型號: MPC8548CVUAQHB
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 32-BIT, 1000 MHz, MICROPROCESSOR, CBGA783
封裝: 29 X 29 MM, 1 MM PITCH, FLIP CHIP, LEAD FREE, CERAMIC, BGA-783
文件頁數(shù): 54/142頁
文件大?。?/td> 1504K
代理商: MPC8548CVUAQHB
MPC8548E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 5
Freescale Semiconductor
19
DDR and DDR2 SDRAM
6
DDR and DDR2 SDRAM
This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the
MPC8548E. Note that GVDD(typ) = 2.5 V for DDR SDRAM, and GVDD(typ) = 1.8 V for DDR2
SDRAM.
6.1
DDR SDRAM DC Electrical Characteristics
Table 11 provides the recommended operating conditions for the DDR2 SDRAM controller of the
MPC8548E when GVDD(typ) = 1.8 V.
Table 12 provides the DDR2 I/O capacitance when GVDD(typ) = 1.8 V.
Table 11. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
1.71
1.89
V
1
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
V2
I/O termination voltage
VTT
MVREF –0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF +0.125
GVDD +0.3
V
Input low voltage
VIL
–0.3
MVREF – 0.125
V
Output leakage current
IOZ
–50
50
μA4
Output high current (VOUT = 1.420 V)
IOH
–13.4
mA
Output low current (VOUT = 0.280 V)
IOL
13.4
mA
Notes:
1. GVDD is expected to be within 50 mV of the DRAM VDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
VOUT GVDD.
Table 12. DDR2 SDRAM Capacitance for GVDD(typ)=1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS, DQS
CIO
68
pF
1
Delta input/output capacitance: DQ, DQS, DQS
CDIO
—0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 1.8 V ± 0.090 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
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