參數(shù)資料
型號: MPC8377EVRAJF
廠商: Freescale Semiconductor
文件頁數(shù): 20/127頁
文件大小: 0K
描述: MPU PWRQUICC II 533MHZ 689TEPBGA
產(chǎn)品培訓(xùn)模塊: MPC837x PowerQUICC II Pro Processors
視頻文件: Introduction to the MPC837x Family
標準包裝: 27
系列: MPC83xx
處理器類型: 32-位 MPC83xx PowerQUICC II Pro
速度: 533MHz
電壓: 1V
安裝類型: 表面貼裝
封裝/外殼: 689-BBGA 裸露焊盤
供應(yīng)商設(shè)備封裝: 689-TEPBGA II(31x31)
包裝: 托盤
配用: MPC8377E-RDBA-ND - BOARD REF DES MPC8377 REV 2.1
MPC8377E-MDS-PB-ND - BOARD MODULAR DEV SYSTEM
MPC8377E PowerQUICC II Pro Processor Hardware Specifications, Rev. 8
116
Freescale Semiconductor
The thermal performance of a device cannot be adequately predicted from the junction to ambient thermal
resistance. The thermal performance of any component is strongly dependent on the power dissipation of
surrounding components. In addition, the ambient temperature varies widely within the application. For
many natural convection and especially closed box applications, the board temperature at the perimeter
(edge) of the package is approximately the same as the local air temperature near the device. Specifying
the local ambient conditions explicitly as the board temperature provides a more precise description of the
local ambient conditions that determine the temperature of the device.
At a known board temperature, the junction temperature is estimated using the following equation:
TJ = TA + (RθJB × PD)
where:
TA = ambient temperature for the package (°C)
RθJB = junction to board thermal resistance (°C/W) per JESD51-8
PD = power dissipation in the package (W)
When the heat loss from the package case to the air can be ignored, acceptable predictions of junction
temperature can be made. The application board should be similar to the thermal test condition: the
component is soldered to a board with internal planes.
24.2.3
Experimental Determination of Junction Temperature
NOTE
The heat sink cannot be mounted on the package.
To determine the junction temperature of the device in the application after prototypes are available, use
the thermal characterization parameter (
Ψ
JT) to determine the junction temperature and a measure of the
temperature at the top center of the package case using the following equation:
TJ = TT + (ΨJT × PD)
where:
TJ = junction temperature (°C)
TT = thermocouple temperature on top of package (°C)
Ψ
JT = junction to ambient thermal resistance (°C/W)
PD = power dissipation in the package (W)
The thermal characterization parameter is measured per the JESD51-2 specification using a 40 gauge type
T thermocouple epoxied to the top center of the package case. The thermocouple should be positioned so
that the thermocouple junction rests on the package. A small amount of epoxy is placed over the
thermocouple junction and over about 1 mm of wire extending from the junction. The thermocouple wire
is placed flat against the package case to avoid measurement errors caused by cooling effects of the
thermocouple wire.
24.2.4
Heat Sinks and Junction-to-Case Thermal Resistance
For the power values the device is expected to operate at, it is anticipated that a heat sink will be required.
A preliminary estimate of heat sink performance can be obtained from the following first-cut approach.
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