參數(shù)資料
型號(hào)： MPC8313CVRAGDB
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 10/99頁(yè)
文件大?。?/td> 0K
描述： MPU POWERQUICC II PRO 516-PBGA
標(biāo)準(zhǔn)包裝： 40
系列： MPC83xx
處理器類型： 32-位 MPC83xx PowerQUICC II Pro
速度： 400MHz
電壓： 0.95 V ~ 1.05 V
安裝類型： 表面貼裝
封裝/外殼： 516-BBGA 裸露焊盤(pán)
供應(yīng)商設(shè)備封裝： 516-PBGAPGE（27x27）
包裝： 托盤(pán)
MPC8313E PowerQUICC II Pro Processor Hardware Specifications, Rev. 4
18
Freescale Semiconductor
6.2.2
DDR and DDR2 SDRAM Output AC Timing Specifications
Table 20. DDR and DDR2 SDRAM Output AC Timing Specifications for Rev. 1.0 Silicon
Parameter
Symbol 1
Min
Max
Unit
Note
MCK[n] cycle time, MCK[n]/MCK[n] crossing
tMCK
610
ns
2
ADDR/CMD output setup with respect to MCK
tDDKHAS
ns
3
333 MHz
2.1
—
266 MHz
2.5
—
ADDR/CMD output hold with respect to MCK
tDDKHAX
ns
3
333 MHz
2.4
—
266 MHz
3.15
—
MCS[n] output setup with respect to MCK
tDDKHCS
ns
3
333 MHz
2.4
—
266 MHz
3.15
—
MCS[n] output hold with respect to MCK
tDDKHCX
ns
3
333 MHz
2.4
—
266 MHz
3.15
—
MCK to MDQS Skew
tDDKHMH
–0.6
0.6
ns
4
MDQ//MDM output setup with respect to
MDQS
tDDKHDS,
tDDKLDS
ps
5
333 MHz
800
—
266 MHz
900
—
MDQ//MDM output hold with respect to MDQS
tDDKHDX,
tDDKLDX
ps
5
333 MHz
900
—
266 MHz
1100
—
MDQS preamble start
tDDKHMP
–0.5
t
MCK – 0.6
–0.5
t
MCK + 0.6
ns
6
MDQS epilogue end
tDDKHME
–0.6
0.6
ns
6
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing
(DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (AX or DX). For example,
tDDKHAS symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H) state until outputs
(A) are setup (S) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK memory clock reference
(K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.
2. All MCK/MCK referenced measurements are made from the crossing of the two signals ±0.1 V.
3. ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK, MCS, and MDQ//MDM/MDQS.
4. Note that tDDKHMH follows the symbol conventions described in note 1. For example, tDDKHMH describes the DDR timing
(DD) from the rising edge of the MCK[n] clock (KH) until the MDQS signal is valid (MH). tDDKHMH can be modified through
control of the DQSS override bits in the TIMING_CFG_2 register. This is typically set to the same delay as the clock adjust
in the CLK_CNTL register. The timing parameters listed in the table assume that these 2 parameters have been set to the
same adjustment value. See the MPC8313E PowerQUICC II Pro Integrated Processor Family Reference Manual, for a
description and understanding of the timing modifications enabled by use of these bits.
5. Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC
(MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the microprocessor.
6. All outputs are referenced to the rising edge of MCK[n] at the pins of the microprocessor. Note that tDDKHMP follows the
symbol conventions described in note 1.
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