參數(shù)資料
型號: MPC8270CVRMIBA
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 32-BIT, 66.67 MHz, RISC PROCESSOR, PBGA516
封裝: 27 X 27 MM, 1 MM PITCH, LEAD FREE, PLASTIC, FBGA-516
文件頁數(shù): 135/156頁
文件大?。?/td> 1680K
代理商: MPC8270CVRMIBA
8
MPC8280 PowerQUICC II Family Hardware Specications
MOTOROLA
DC Electrical Characteristics
NOTE: Core, PLL, and I/O Supply Voltages
After power up sequence is complete, VDDH and VDD/VCCSYN must
track each other and both voltages must vary in the same direction. When
varying in the positive direction, VDDH may vary up to 5% from nominal
or 3.3 + 0.165 = 3.465 V, in which case VDD/VCCSYN must also vary
upward by 5% from nominal or 1.525 + 0.075 = 1.6 V. The same applies
to the negative direction: VDDH may vary downward up to -5% from
nominal or 3.3 –0.165 = 3.135 V, in which case VDD/VCCSYN must vary
downward by-5% from nominal or 1.525 –0.075 = 1.45 V. A/C timing
specication violation may occur during the time that voltage tracking is
not correct.
This device contains circuitry protecting against damage due to high static voltage or electrical elds;
however, it is advised that normal precautions be taken to avoid application of any voltages higher than
maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused
inputs are tied to an appropriate logic voltage level (either GND or VCC).
Figure 2 shows the undershoot and overshoot voltage of the 60x and local bus memory interface of the
MPC8280. Note that in PCI mode the I/O interface is different.
Figure 2. Overshoot/Undershoot Voltage
3
DC Electrical Characteristics
Table 5 shows DC electrical characteristics.
2 Note that for extended temperature parts the range is (-40)
TA
– 105Tj.
Table 5. DC Electrical Characteristics1
Characteristic
Symbol
Min
Max
Unit
Input high voltage—
all inputs except TRST and PORESET2
VIH
2.0
3.465
V
Input low voltage
VIL
GND
0.8
V
CLKIN input high voltage
VIHC
2.4
3.465
V
CLKIN input low voltage
VILC
GND
0.4
V
Input leakage current, VIN = VDDH
3
IIN
—10
A
GND
GND – 0.3 V
GND – 1.0 V
Not to exceed 10%
GVDD
of tSDRAM_CLK
GVDD + 5%
4 V
VIH
VIL
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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