參數(shù)資料
型號: MPC8250ACZUMHBC
廠商: Freescale Semiconductor
文件頁數(shù): 60/62頁
文件大小: 0K
描述: IC MPU POWERQUICC II 480-TBGA
標(biāo)準(zhǔn)包裝: 21
系列: MPC82xx
處理器類型: 32-位 MPC82xx PowerQUICC II
速度: 266MHz
電壓: 2V
安裝類型: 表面貼裝
封裝/外殼: 480-LBGA
供應(yīng)商設(shè)備封裝: 408-TBGA(37.5x37.5)
包裝: 托盤
MPC8250 Hardware Specifications, Rev. 2
Freescale Semiconductor
7
Electrical and Thermal Characteristics
NOTE: Core, PLL, and I/O Supply Voltages
VDDH, VCCSYN, and VDD must track each other and both must vary in
the same direction—in the positive direction (+5% and +0.1 Vdc) or in the
negative direction (-5% and -0.1 Vdc).
This device contains circuitry protecting against damage due to high static voltage or electrical fields;
however, it is advised that normal precautions be taken to avoid application of any voltages higher than
maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused
inputs are tied to an appropriate logic voltage level (either GND or VCC).
Figure 2 shows the undershoot and overshoot voltage of the 60x and local bus memory interface of the
MPC8280. Note that in PCI mode the I/O interface is different.
Figure 2. Overshoot/Undershoot Voltage
Table 3 shows DC electrical characteristics.
Table 3. DC Electrical Characteristics 1
Characteristic
Symbol
Min
Max
Unit
Input high voltage, all inputs except CLKIN
VIH
2.0
3.465
V
Input low voltage
VIL
GND
0.8
V
CLKIN input high voltage
VIHC
2.4
3.465
V
CLKIN input low voltage
VILC
GND
0.4
V
Input leakage current, VIN = VDDH
2
IIN
—10
A
Hi-Z (off state) leakage current, VIN = VDDH
IOZ
—10
A
Signal low input current, VIL = 0.8 V
IL
—1
A
Signal high input current, VIH = 2.0 V
IH
—1
A
Output high voltage, IOH = –2 mA
VOH
2.4
V
GND
GND – 0.3 V
GND – 1.0 V
Not to exceed 10%
GVDD
of tSDRAM_CLK
GVDD + 5%
4 V
VIH
VIL
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