參數(shù)資料
型號： MPC5602F0VLL6
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 32-BIT, FLASH, 64 MHz, RISC MICROCONTROLLER, PQFP100
封裝： 14 X 14 MM, 1.40 MM, 0.50 MM PITCH, ROHS COMPLIANT, LQFP-100
文件頁數(shù)： 60/95頁
文件大?。?/td> 1694K
代理商： MPC5602F0VLL6
MPC5602P Microcontroller Data Sheet, Rev. 4.1
Freescale Semiconductor
63
3.15
Flash memory electrical characteristics
3.15.1
Program/Erase characteristics
6 20 MHz ADC clock. Specific prescaler is programmed on MC_PLL_CLK to provide 20 MHz clock to the ADC.
7 See Figure 14.
Table 29. Program and erase specifications
Symbol
C
Parameter
Value
Unit
Min
Typ1
1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to
change pending device characterization.
Initial
Max2
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
Max3
3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
values are characterized but not guaranteed.
Twprogram P Word Program Time for data flash memory4
4 Actual hardware programming times. This does not include software overhead.
—
30
70
500
s
Tdwprogram P Double Word Program Time for code flash memory4
—
22
50
500
s
TBKPRG
P Bank Program (256 KB)4,5
5 Typical Bank programming time assumes that all cells are programmed in a single pulse. In reality some cells will
require more than one pulse, adding a small overhead to total bank programming time (see “Initial Max” column).
—
0.73
0.83
17.5
s
P Bank Program (64 KB)4,5
—0.49
1.2
4.1
s
T16kpperase P 16 KB Block Pre-program and Erase Time for code
flash memory
—
300
500
5000
ms
16 KB Block Pre-program and Erase Time for data
flash memory
—
700
800
5000
T32kpperase P 32 KB Block Pre-program and Erase Time
—
400
600
5000
ms
T128kpperase P 128 KB Block Pre-program and Erase Time
—
800
1300
7500
ms
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參數(shù)描述
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