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參數(shù)資料
| 型號(hào)： | MPC5601F0VLH6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 32-BIT, FLASH, 64 MHz, RISC MICROCONTROLLER, PQFP64 |
| 封裝： | 10 X 10 MM, 1.40 MM, 0.50 MM PITCH, ROHS COMPLIANT, MS-026BCD, LQFP-64 |
| 文件頁數(shù)： | 37/95頁 |
| 文件大小： | 1694K |
| 代理商： | MPC5601F0VLH6 |
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MPC5602P Microcontroller Data Sheet, Rev. 4.1
Freescale Semiconductor
42
3.6
Electromagnetic interference (EMI) characteristics
3.7
Electrostatic discharge (ESD) characteristics
3.8
Power management electrical characteristics
3.8.1
Voltage regulator electrical characteristics
The internal voltage regulator requires an external NPN (BCP68, BCX68 or BC817) ballast to be connected as shown in
Figure 8. Capacitances should be placed on the board as near as possible to the associated pins. Care should also be taken to
limit the serial inductance of the board to less than 5 nH.
Table 11. EMI testing specifications
Symbol
Parameter
Conditions
Clocks
Frequency
Level
(Typ)
Unit
VEME Radiated emissions VDD =5.0 V; TA =25°C
Other device configuration,
test conditions and EM testing
per standard IEC61967-2
fOSC =8MHz
fCPU =64MHz
No PLL frequency
modulation
150 kHz–150 MHz
11
dBV
150–1000 MHz
13
IEC level
M
—
fOSC =8MHz
fCPU =64MHz
±4% PLL frequency
modulation
150 kHz–150 MHz
8
dBV
150–1000 MHz
12
IEC level
N
—
VDD =3.3 V; TA =25°C
Other device configuration,
test conditions and EM testing
per standard IEC61967-2
fOSC =8MHz
fCPU =64MHz
No PLL frequency
modulation
150 kHz–150 MHz
9
dBV
150–1000 MHz
12
IEC level
M
—
fOSC =8MHz
fCPU =64MHz
±4% PLL frequency
modulation
150 kHz–150 MHz
7
dBV
150–1000 MHz
12
IEC level
N
—
Table 12. ESD ratings1,2
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated
Circuits.
2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification requirements. Complete DC parametric and functional testing shall be performed per applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Symbol
Parameter
Conditions
Value
Unit
VESD(HBM)
SR Electrostatic discharge (Human Body Model)
—
2000
V
VESD(CDM)
SR Electrostatic discharge (Charged Device Model)
—
750 (corners)
V
500 (other)
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