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參數(shù)資料
| 型號(hào)： | MPC17531AEP |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | 700?mA Dual H-Bridge Motor Driver with 3.0V Compatible Logic I/O |
| 中文描述： | 700？毫安雙H橋電機(jī)驅(qū)動(dòng)器兼容邏輯為3.0V的I / O |
| 文件頁數(shù)： | 6/19頁 |
| 文件大?。?/td> | 501K |
| 代理商： | MPC17531AEP |
Analog Integrated Circuit Device Data
Freescale Semiconductor
6
17531A
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics
Characteristics noted under conditions T
A
= 25
°
C, V
DD
= 3.0 V, V
M
= 5.0 V, GND = 0 V unless otherwise noted. Typical values
noted reflect the approximate parameter means at T
A
= 25
°
C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER INPUT
Motor Supply Voltage (Using Internal Charge Pump)
(7)
V
M-CP
2.0
5.0
8.6
V
Motor Supply Voltage (
V
CRES
Applied Externally)
(8)
V
M-NCP
–
–
10
V
Gate Drive Voltage
-
Motor Supply Voltage (
V
CRES
Applied Externally)
(9)
V
CRES
-
V
M
5.0
6.0
–
V
Logic Supply Voltage
V
DD
2.7
3.0
3.6
V
Driver Quiescent Supply Current
No Signal Input
Power Save Mode
I
QM
I
QM-PSAVE
–
–
–
–
100
1.0
μ
A
Logic Quiescent Supply Current
No Signal Input
(10)
Power Save Mode
I
QVDD
I
QVDD-
PSAVE
–
–
–
–
1.0
1.0
mA
Operating Power Supply Current
Logic Supply Current
(11)
Charge Pump Circuit Supply Current
(12)
I
VDD
I
CRES
–
–
–
–
3.0
0.7
mA
Low V
DD
Detection Voltage
(13)
V
DDDET
1.0
1.6
2.5
V
Driver Output ON Resistance
(14)
R
DS(ON)
–
0.8
1.2
Ohms
GATE DRIVE
Gate Drive Voltage
(12)
No Current Load
V
CRES
12
13
13.5
V
Gate Drive Ability (Internally Supplied)
I
C
RES
=
-
1.0 mA
V
CRES
load
8.5
9.2
–
V
Recommended External Capacitance (C1L – C1H, C2L – C2H, C
RES
– GND)
C
CP
0.01
0.1
1.0
μ
F
Notes
7.
Gate drive voltage VC
RES
is applied from an external source. 2 x V
DD
+ V
M
must be < VC
RES
max (13.5 V).
No internal charge pump used. VC
RES
is applied from an external source.
R
DS(ON)
is not guaranteed if
V
C
RES
- V
M
< 5.0 V. Also, function is not guaranteed if
V
C
RES
- V
M
< 3.0 V.
I
Q
VDD
includes the current to pre-driver circuit.
I
V
DD
includes the current to predriver circuit at f
IN
= 100 kHz.
At f
IN
= 20 kHz.
Detection voltage is defined as when the output becomes high-impedance after V
DD
drops below the detection threshold. VC
RES
is
applied from an external source. 2 x V
DD
+ V
M
must be < VC
RES
max (13.5 V).
I
O
= 0.7 A source + sink.
8.
9.
10.
11.
12.
13.
14.
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