參數(shù)資料
型號: MP7529BKS
廠商: EXAR CORP
元件分類: DAC
英文描述: 5 V CMOS Dual Buffered Multiplying 8-Bit Digital-to-Analog Converter
中文描述: DUAL, PARALLEL, 8 BITS INPUT LOADING, 0.2 us SETTLING TIME, 8-BIT DAC, PDSO20
封裝: 0.300 INCH, SOIC-20
文件頁數(shù): 4/12頁
文件大?。?/td> 114K
代理商: MP7529BKS
MP7529B
4
Rev. 2.00
ELECTRICAL CHARACTERISTICS (CONT’D)
25
°
C
Typ
Tmin to Tmax
Min
Parameter
Symbol
Min
Max
Max
Units
Test Conditions/Comments
ANALOG OUTPUTS
2
Output Capacitance
C
OUTA/B
C
OUTA/B
120
50
120
50
pF
pF
DAC inputs all 1’s
DAC inputs all 0’s
POWER SUPPLY
Supply Current
I
DD
1
2
1
2
mA
mA
All digital inputs = 0 V or 5 V
All digital inputs = V
IL
or V
IH
TIMING SPECIFICATIONS
4
Chip Select to Write Set-Up Time
Chip Select to Write Hold Time
DAC Select to Write Set-Up Time
DAC Select to Write Hold Time
Data Valid to Write Set-Up Time
Data Valid to Write Hold Time
Write Pulse Width
5
t
CS
t
CH
t
AS
t
AH
t
DS
t
DH
t
WR
60
15
60
15
60
0
60
80
20
80
20
80
0
80
ns
ns
ns
ns
ns
ns
ns
NOTES:
1
2
3
4
5
Specifications are subject to change without notice
Full Scale Range (FSR) is 10V for unipolar mode.
Guaranteed but not production tested.
Digital input levels should not go below GND or exceed the positive supply voltage, otherwise damage may occur.
See timing diagram.
t
WR
= 40ns minimum if t
DH
> 15ns (@T = 25
°
C)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C unless otherwise noted)
1, 2, 3
V
DD
to GND
AGND to DGND
(Functionality Guaranteed +0.5 V)
Digital Input Voltage to GND
I
OUTA
, I
OUTB
to GND
V
REFA
, V
REFB
to GND
NOTES:
1
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation at or above this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
2
Any input pin which can see a value outside the absolute maximum ratings
should be protected by Schottky diode clamps
(HP5082-2835) from input pin to the supplies. All inputs have protection diodeswhich will protect the device from short
transients outside the supplies of less than 100mA for less than 100
μ
s.
3
GND refers to AGND and DGND.
0 to +7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+1 V
GND –0.5 to V
DD
+0.5 V
GND –0.5 to V
DD
+0.5 V
. . . .
. . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . .
+25 V
V
RFBA
, V
RFBB
to GND
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Package Power Dissipation Rating to 75
°
C
PDIP, SOIC, PLCC
Derates above 75
°
C
+25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . .
–65
°
C to +150
°
C
. . . . . .
+300
°
C
900mW
12mW/
°
C
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . .
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