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參數(shù)資料
| 型號： | MP6T2TR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 32 V, 2 CHANNEL, PNP, Si, POWER TRANSISTOR |
| 封裝： | MPT6, 6 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MP6T2TR |
MP6T2
Transistors
Rev.A
2/3
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current ( )
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
5 10 20 50 100
500 1000 2000
200
50
100
200
500 Ta=25°C
IC/IB
=50
20
10
Electrical characteristics (Ta=25
°C)
Parameter
Collector-Emitter breakdown voltage
Collector-base breakdown voltage
<Tr1, Tr2>
Emitter-base breakdown voltage
Collector cut off current
Emitter cut off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
32
40
5
120
500
100
50
1.0
390
800
V
IC
= 1mA
IC
= 50A
IE
= 50A
VCB
= 20V
VEB
= 4V
VCE
= 3V, IC= 500mA
IC/IB
= 2.0A/200mA
VCE
= 5V, IE= 500mA, f=100MHz
VCB
= 10V, IE=0A, f=1MHz
V
A
mV
MHz
pF
Typ.
Max.
Unit
Conditions
Pulsed
Electrical characteristics curves
Fig.1 Grounded Emitter Propagation
Characteristics
BASE TO EMITTER VOLTAGE : VBE
(V)
COLLECTOR
CURRENT
:
I
C
(mA)
0
0.2
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0.4
1
2
5
10
20
50
100
200
500
1000
VCE
= 3V
Ta
=100°C
25
°C
40°C
Fig.2 Grounded Emitter Output
Characteristics
0.4
0
0.8
1.2
1.6
2
0
0.1
0.2
0.3
0.4
0.5
IB
=0A
250A
500A
750A
1mA
1.25mA
1.5mA
1.75mA
2mA
2.25mA
2.5mA
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Ta
=25°C
Fig.3 DC Current Gain vs.
Collector Curren ( )
DC
CURRENT
GAIN
:
h
FE
5 10 20 50 100
500 1000 2000
200
50
20
100
200
500
Ta
=25°C
COLLECTOR CURRENT : IC
(mA)
VCE
= 6V
3V
1V
Fig.4 DC Current Gain vs.
Collector Current ( )
50
20
100
200
500
DC
CURRENT
GAIN
:
h
FE
VCE
= 3V
COLLECTOR CURRENT : IC
(mA)
5 10 20 50 100
500 1000 2000
200
Ta
=100°C
25
°C
25°C
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current ( )
5 10 20
50 100
500 1000 2000
200
20
50
100
200
500 lC/lB=10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
Ta
=100°C
25
°C
40°C
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