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參數(shù)資料
| 型號： | MP6754 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon N Channel IGBT(High Power Switching Applications Motor Control Applications) |
| 中文描述： | 硅?頻道IGBT的（高功率開關應用的電機控制應用） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 200K |
| 代理商： | MP6754 |
MP6754
2001-03-13 2/5
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
V
CES
600
V
Gate-emitter voltage
V
GES
± 20
V
DC
I
C
10
Collector current
1ms
I
CP
20
A
DC
I
F
10
Forward current
1ms
I
FM
20
A
Collector power dissipation (Tc = 25°C)
P
C
40
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
40 ~ 125
°C
Isolation voltage
V
ISOL
2500
(AC 1 minute)
V
Screw torque
―
1.5
N·m
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
= ± 20V, V
CE
= 0
―
―
± 500
nA
Collector cut-off current
I
CES
V
CE
= 600V, V
GE
= 0
―
―
1.0
mA
Gate-emitter cut-off voltage
V
GE
(off)
I
C
= 10mA, V
CE
= 5V
6.0
―
9.0
V
Collector-emitter saturation voltage
V
CE
(sat)
I
C
= 10A, V
GE
= 15V
―
3.0
4.0
V
Input capacitance
C
ies
V
CE
= 10V, V
GE
= 0, f = 1MHz
―
620
―
pF
Rise time
t
r
―
0.3
0.6
Turn-on time
t
on
―
0.4
0.8
Fall time
t
f
―
0.2
0.35
Switching time
Turn-off time
t
off
―
0.4
0.8
μs
Forward voltage
V
F
I
F
= 10A, V
GE
= 0
―
1.7
2.5
V
Reverse recovery time
t
rr
I
F
= 10A, V
GE
=
10V
di / dt = 100A / μs
―
0.08
0.15
μs
Transistor
―
―
3.09
Thermal resistance
R
th
(j-c)
Diode
―
―
3.09
°C / W
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EAA2
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