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參數(shù)資料
| 型號(hào)： | MP6750 |
| 廠商： | Toshiba Corporation |
| 英文描述： | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| 中文描述： | N通道IGBT的（大功率開關(guān)，馬達(dá)控制應(yīng)用） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 190K |
| 代理商： | MP6750 |
MP6750
2001-03-13 2/5
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
V
CES
600
V
Gate-emitter voltage
V
GES
± 20
V
DC
I
C
15
Collector current
1ms
I
CP
30
A
DC
I
F
15
Forward current
1ms
I
FM
30
A
Collector power dissipation (Tc = 25°C)
P
C
55
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
40 ~ 125
°C
Isolation voltage
V
Isol
2500
(AC 1 minute)
V
Screw torque
―
1.5
N·m
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
= ± 20V, V
CE
= 0
―
―
± 20
μA
Collector cut-off current
I
CES
V
CE
= 600V, V
GE
= 0
―
―
1.0
mA
Gate-emitter cut-off voltage
V
GE
(off)
I
C
= 15mA, V
CE
= 5V
3.0
―
6.0
V
Collector-emitter saturation voltage
V
CE
(sat)
I
C
= 15A, V
GE
= 15V
―
3.0
4.0
V
Input capacitance
C
ies
V
CE
= 10V, V
GE
= 0, f = 1MHz
―
1000
―
pF
Rise time
t
r
―
0.3
0.6
Turn-on time
t
on
―
0.4
0.8
Fall time
t
f
―
0.2
0.35
Switching time
Turn-off time
t
off
―
0.5
1.0
μs
Forward voltage
V
F
I
F
= 15A, V
GE
= 0
―
1.7
2.5
V
Reverse recovery time
t
rr
I
F
= 15A, V
GE
=
10V
di / dt = 50A / μs
―
0.08
0.15
μs
Transistor
―
―
2.27
Thermal resistance
R
th
(j-c)
Diode
―
―
3.09
°C / W
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EAA2
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