參數(shù)資料
型號： MP4TD0936
廠商： M-Pulse Microwave Inc.
英文描述： Silicon Bipolar MMIC Cascadable Amplifier
中文描述： 硅雙極單片級聯(lián)放大器
文件頁數(shù)： 1/3頁
文件大小： 55K
代理商： MP4TD0936
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0935, MP4TD0936
Features
Cascadable 50
Ω
Gain Block
3dB Bandwidth: DC to 4.5 GHz
8.0 dB Typical Gain @ 1.0 GHz
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's
MP4TD0935
performance silicon bipolar MMICs housed in a cost
effective ceramic microstrip packages. The MP4TD0935
and MP4TD0936 are designed for use where a general
purpose 50
Ω
gain block is required. Typical applications
include narrow and wide band IF and RF amplifiers in
industrial and military applications.
The MP4TD0935 and MP4TD0936 are fabricated using a
10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased performance
and reliability.
TYPICAL POWER GAIN vs FREQUENCY
12
and
MP4TD0936
are
high
0
2
4
6
8
10
0.1
1
10
FREQUENCY (GHz)
G
Id=35mA
Ceramic Microstrip Case Style Outlines
1,2,3
Available in short lead version as MP4TD0936.
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.057
.083
2,11
.100
2,54
.085
2,15
.455 ±.030
11,54±0,76
.006 ±.002
.022
0,56
.020
0,508
±0.010
0.180
4.57 ±0,25
MA4TD0936
MA4TD0935
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance:
in .xxx =
±
.005; mm .xx =
±
.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
1
2 & 4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Electrical Specifications @ T
A
= +25
°
C, Id = 35 mA, Z0 = 50
Ω
Symbol
Parameters
Gp
Power Gain (
S21
2)
Δ
Gp
Gain Flatness
f
3dB
3 dB Bandwidth
SWR
in
Input SWR
SWR
out
Output SWR
P
1dB
Output Power @ 1dB Gain Compression
NF
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Test Conditions
f = 0.1 GHz
f = 0.1 to 3.0 GHz
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
7.0
-
-
-
-
-
-
-
-
7.0
-
Typ.
8.0
+ 0.4
4.5
1.9
1.4
11.5
6.0
23.0
100
7.8
-16.0
Max.
9.0
+ 0.6
-
-
-
-
-
-
-
8.6
-
-
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
-
-
相關(guān)PDF資料
PDF描述
MP4TD0936T Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0970 Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0970T Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1100 Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1100G Silicon Bipolar MMIC Cascadable Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MP4TD0936T 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0970 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0970T 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1100 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1100G 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
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