參數(shù)資料
型號(hào): MP4T85639
廠商: M-Pulse Microwave Inc.
英文描述: Moderate Power High fT NPN Silicon Transistor
中文描述: 中等功率高fT的NPN硅晶體管
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 109K
代理商: MP4T85639
Moderate Power High fT NPN Silicon Transistor MP4T856 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T856 Series
Electrical Specifications @ +25
°
C
MP4T85600
Chips
7.0 typ.
MP4T85633
SOT-23
7.0 typ.
MP4T85635
Micro-X
7.0 typ.
MP4T85639
SOT-143
7.0 typ.
Symbol
fT
Parameters
Gain Bandwidth
Product
Insertion Power Gain
Noise Figure
Associated Gain
Output Power at 1 dB
Compression
Thermal Resistance
Thermal Resistance
Test Conditions
VCE=8V, IC=30mA
Units
GHz
|S21E|2
NF
GA
P1dB
VCE=8V, IC=20MA, f=1GHz
VCE=8V, IC=10mA, f=1GHz
VCE=8V, IC=10mA, f=1GHz
VCE=8V, IC=40mA, f=1GHz,
f=2GHz
Junction/Ambient (Free Air)
Junction/Case
dB
dB
dB
dBm
13.5 min.
1.6 max.
16 typ.
16 typ.
10 typ.
-
60 max.
1
12 min.
1.7 max.
15 typ.
13 typ.
10 typ.
600 max.
200 typ.
13.0 min.
1.6 max.
16 typ.
16 typ.
10 typ.
550 max
200 typ.
12 min.
1.7 max.
15 typ.
13 typ.
10 typ.
600 max.
200 typ.
RTH(J-A)
RTH(J-C)
1 See power derating curves.
°C/W
°C/W
Electrical Specifications @ +25
°
C
Symbol
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
Forward Current Gain
COB
Collector-Base Junction Capacitance
Parameters
Test Conditions
VCB = 8V, IE = 0
VEB = 1V, IC = 0
VCE = 8V, IC = 20mA
VCB = 8 V, f = 1 MHz
Units
μ
A
μ
A
-
pF
Min.
-
-
20
-
Typ.
-
-
100
0.62
Max.
1.0
1
250
0.75
MP4T85635
Typical Scattering Parameters in the MIcro-X Package
VCE = 8 Volts, IC = 10 mA
Frequency
S11E
(MHz)
Mag.
200
0.581
400
0.516
600
0.496
800
0.487
1000
0.483
1200
0.481
1400
0.479
1600
0.478
1800
0.478
2000
0.476
2200
0.475
2400
0.475
2600
0.474
2800
0.473
3000
0.472
4000
0.472
5000
0.476
6000
0.484
S21E
S12E
S22E
Angle
-97.9
-151.1
177.1
153.4
133.2
114.9
97.7
81.2
65.1
49.4
33.9
18.4
3.9
-12.2
-27.4
-103.3
-176.5
104.4
Mag.
16.95
10.72
7.59
5.84
4.74
3.99
3.46
3.06
2.74
2.49
2.29
2.12
1.98
1.86
1.76
1.39
1.17
1.03
Angle
117.1
83.5
60.3
40.7
22.7
5.6
-11.0
-27.3
-43.4
-59.3
-75.0
-90.6
-106.1
-121.5
-136.7
148.1
74.8
3.1
Mag.
0.033
0.045
0.054
0.064
0.074
0.085
0.097
0.109
0.121
0.133
0.145
0.158
0.170
0.183
0.197
0.267
0.340
0.415
Angle
44.9
27.8
17.9
8.6
1.0
11.4
22.2
33.6
45.4
57.3
69.5
82.0
94.7
107.3
120.1
174.4
107.1
38.2
Mag
0.685
0.481
0.396
0.355
0.334
0.324
0.317
0.311
0.311
0.315
0.314
0.311
0.317
0.324
0.323
0.336
0.367
0.375
Angle
-46.4
-65.0
-79.0
-91.6
-105.0
-118.0
-132.0
-147.0
-162.0
-177.0
168.4
152.6
136.0
121.0
107.0
28.5
-49.0
-126.0
相關(guān)PDF資料
PDF描述
MP4TD0300 Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0300G Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0300W Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0310 Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0335 Silicon Bipolar MMIC Cascadable Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MP4TD0300 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0300G 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0300W 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0310 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0335 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier