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參數(shù)資料
| 型號： | MP4T64535 |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Silicon Bipolar High fT Low Noise Microwave Transistors |
| 中文描述： | 硅雙極高fT的微波低噪聲晶體管 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 108K |
| 代理商： | MP4T64535 |
Silicon Bipolar High f
T
Low Noise Microwave Transistors MP4T645 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 8
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Case Styles (Cont’d)
MP4T64535 Micro-X
Collector
Emitter
B
E
F
4 PLCS.
C
G
Base
H
Emitter
D
A
MP4T64500
Case Style 00 (Chip)
BASE
EMITTER
D
A
C
B
E
MP4T64539
Case Style SOT-143
Emitter
G
J
E
K
A
H
M
C
F
B
L
P
N
Collector Emitter
Base
D
MP4T64535
INCHES
MIN.
0.092
0.079
0.019
0.018
0.150
0.003
MILLIMETERS
MIN.
2.34
2.01
0.48
0.46
3.81
0.08
45
°
DIM.
A
B
C
D
E
F
G
H
MAX.
0.108
0.087
0.070
0.025
0.022
0.006
MAX.
2.74
2.21
1.78
0.64
0.56
0.15
45
°
MP4T64500
DIM.
A
B
C
D
E (Dia.)
INCHES
0.013
0.013
0.004
0.0005
0.0012
0.0045
MILLIMETERS
0.325
0.325
0.110
0.013
0.030
0.114
F (chip thickness)
MP4T64539
INCHES
MIN.
0.013
0.030
0.003
0.110
0.047
0.075 typical
0.040 typical
MILLIMETERS
MIN.
0.35
0.75
0.08
2.80
1.20
1.90 typical
1.70 typical
DIM.
A
B
C
D
E
F
G
H
J
K
L
M
MAX.
0.044
0.004
0.040
0.020
0.035
0.006
0.119
0.056
MAX.
1.10
0.10
1.00
0.50
0.90
0.15
3.00
1.40
0.103
0.024
2.60
0.60
DIM.
N
P
GRADIENT
10
°
max.
1
2
°
. . . 30
°
NOTE:
1. Applicable on all sides
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MP4T64539 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar High fT Low Noise Microwave Transistors |
| MP4T6825 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Low Current 8 Volt, Low Noise High fT Silicon Transistor |
| MP4T682500 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Low Current 8 Volt, Low Noise High fT Silicon Transistor |
| MP4T682533 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Low Current 8 Volt, Low Noise High fT Silicon Transistor |
| MP4T682535 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Low Current 8 Volt, Low Noise High fT Silicon Transistor |
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