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參數(shù)資料
| 型號： | MP4T636533 |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Low OperatingVoltage, High fT Bipolar Microwave Transistors |
| 中文描述： | 低OperatingVoltage，高fT的微波雙極晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 111K |
| 代理商： | MP4T636533 |
Low Operating Voltage, High f
T
Bipolar Microwave Transistors MP4T6365 Series
V2.00
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Maximum Ratings (TA = 25
°
C)
MP4T6365 Series
Collector-Base Voltage
V
CBO
10 V
Collector-Emitter Voltage
V
CE
6 V
Emitter-Base Voltage
V
EB
1.5 V
Collector Current
I
C
65 mA
Junction Operating Temperature
T
j
200
°
C
Storage Temperature
Chip or Ceramic Packages
Plastic Packages
T
S
-65
°
C to +200
°
C
-65
°
C to +125
°
C
Power Dissipation
Package Type
Maximum Dissipation
@ 25
°
C
Maximum Operating
Temperature
Chip (MP4T636500)
400 mW
175
°
C
SOT-23 (MP4T636533)
200 mW
125
°
C
Micro-X Package (MP4T636535)
300 mW
150
°
C
SOT-143 (MP4T636539)
225 mW
125
°
C
Electrical Specifications @ 25
°
C
MP4T6365 Series
Parameter of Test
Gain Bandwidth Product
Condition
V
CE
= 3 V
I
C
= 20 mA
V
CE
= 3 V
I
C
= 10 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 V
I
C
= 5 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 V
I
C
= 5 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 V
I
C
= 20 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 V
I
C
= 20 mA
f = 2 GHz
f = 4 GHz
Symbol
f
T
Units
GHz
MP4T636500
Chip
10 typ
MP4T636535
Micro-X
10 typ
MP4T636539
SOT-143
10 typ
MP4T636533
SOT-23
10 typ
Insertion Power Gain
|S
21E
|
2
dB
14 typ
7.0 min
13 typ
7.0 min
13 typ
7.0 min
13 typ
7.0 min
Noise Figure
NF
dB
1.3 typ
1.6 typ
1.3 typ
1.6 typ
1.4 typ
1.7 typ
1.4 typ
1.7 typ
Unilateral Gain
GTU (max)
dB
15 typ
10 typ
15 typ
10 typ
14 typ
9 typ
14 typ
9 typ
Maximum Available Gain
MAG
dB
16 typ
12 typ
16 typ
11 typ
16 typ
10 typ
16 typ
10 typ
Output Power at 1 dB
Compression
P
1dB
dBm
16 typ
12 typ
17 typ
13 typ
16 typ
12 typ
16 typ
12 typ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MP4T636535 | Low OperatingVoltage, High fT Bipolar Microwave Transistors |
| MP4T636539 | Low OperatingVoltage, High fT Bipolar Microwave Transistors |
| MP4T645 | Silicon Bipolar High fT Low Noise Microwave Transistors |
| MP4T64500 | Silicon Bipolar High fT Low Noise Microwave Transistors |
| MP4T64533 | Silicon Bipolar High fT Low Noise Microwave Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MP4T636535 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Low OperatingVoltage, High fT Bipolar Microwave Transistors |
| MP4T636539 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Low OperatingVoltage, High fT Bipolar Microwave Transistors |
| MP4T645 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar High fT Low Noise Microwave Transistors |
| MP4T64500 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar High fT Low Noise Microwave Transistors |
| MP4T64533 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar High fT Low Noise Microwave Transistors |
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