參數(shù)資料
型號: MP4T324335
廠商: M-Pulse Microwave Inc.
英文描述: Bipolar High fT Low Voltage NPN Silicon Transistors
中文描述: 雙極低壓高fT的NPN硅晶體管
文件頁數(shù): 2/7頁
文件大?。?/td> 89K
代理商: MP4T324335
Bipolar High fT Low Voltage NPN Silicon Transistors
V4.00
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T3243 Series
Maximum Ratings
Parameter
Collector-Base Voltage
1
Collector-Emitter Voltage
1
Emitter-Base Voltage
1
Collector Current
1
Junction Temperature
Symbol
V
CBO
V
CE
V
EB
I
C
T
j
Unit
Volts
Volts
Volts
mA
MP4T324300
Chip
8
6
1.5
110
200
MP4T324333
SOT-23
8
6
1.5
110
125
MP4T324335
Micro-X
8
6
1.5
110
200
°
C
°
C
mW
Storage Temperature
Power Dissipation
1,3
Operating Temperature
2
1.
At 25
°
C case temperature (packaged transistors) or 25
°
C mounting surface temperature (chip transistors).
2.
Case or bonding surface temperature. Derate maximum power dissipation rating linearly to zero watts at maximum operating temperature.
3.
The thermal resistance of the MP4T324300 junction/case is 50
°
C/watt nominal.
T
STG
-65 to +175
°
C
600
150
-65 to +125
°
C
250
125
-65 to +175
°
C
400
150
P
T
T
CP
°
C
Electrical Specifications @ +25
°
C
Parameter
Gain Bandwidth Product
Condition
V
CE
= 3 volts
I
C
= 50 mA
V
CE
= 3 volts
I
C
= 40 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 volts
I
C
= 10 mA
f = 1 GHz
V
CE
= 3 volts
I
C
= 40 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 volts
I
C
= 40 mA
f = 2 GHz
V
CE
= 3 volts
I
C
= 50 mA
f = 2 GHz
f = 3 GHz
Symbol
f
T
Units
GHz
MP4T324300
Chip
6 typ
MP4T324333
SOT-23
6 typ
MP4T324335
Micro-X
6 typ
Insertion Power Gain
|S
21E
|
2
dB
7 min
3 typ
6 min
2.5 typ
7 min
3 typ
Noise Figure
NF
dB
2.2 max
2.4 max
2.2 max
Unilateral Gain
GTU (max)
dB
10 typ
6 typ
9 typ
4 typ
10 typ
6 typ
Maximum Available Gain
MAG
dB
8.5 typ
7 typ
8.5 typ
Power Out at 1 dB
Compression
P
1dB
dBm
20 typ
15 typ
19 typ
15 typ
20 typ
15 typ
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