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參數(shù)資料
| 型號： | MP4025 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 60 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-25A1A, SIP-10 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 139K |
| 代理商： | MP4025 |
MP4025
2006-10-27
1
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Four Darlington Power Transistors in One)
MP4025
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive
Load Switching
Small package by full molding (SIP 10 pins)
Built-in resistance (RB).
Surge voltage is clamped by zener diode (C-B).
Low VCE (sat): VCE (sat) = 1.2 V (max) (IC = 0.5 A, VBH = 4.2 V)
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 0.7 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
60 ± 10
V
Emitter-base voltage
VEBO
6
V
Input voltage
VB
20
V
DC
IC
1.5
Collector current
Pulse
ICP
2.0
A
Collector power dissipation
(1-device operation)
PC
2.0
W
Collector power dissipation
(4-device operation)
PT
4.0
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-25A1A
RB ≈ 3.6 k, R1 ≈ 5 k, R2 ≈ 300
1
10
2
3
R2
R1
RB
4
5
6
7
8
9
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