- 您現在的位置：買賣IC網 > PDF目錄62586 > MP2508 (LITE-ON SEMICONDUCTOR CORP) 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE PDF資料下載
參數資料
| 型號： | MP2508 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 橋式整流 |
| 英文描述： | 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | MP2508 |
DS21350 Rev. B-3
1 of 2
MP25005/W - MP2510/W
MP25005/W - MP2510/W
25A BRIDGE RECTIFIER
Features
W Suffix Designates Wire Leads
No Suffix Designates Faston Terminals
MP-W
C
A
G
E
B
H
(AC)
(+)
(-)
H
J
A
C
K
A
M
B
H
L
P
A
P
(AC)
(-)
(+)
MP
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Mechanical Data
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MP25
005/W
MP25
01/W
MP25
02/W
MP25
04/W
MP25
06/W
MP25
08/W
MP25
10/W
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
@ TC = 55
°C
IO
25
A
Non-Repetitive Peak Forward Surge Current,
8.3 ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
300
A
Forward Voltage (per element)
@ IF = 12.5A
VF
1.1
V
Peak Reverse Current
@ TC = 25
°C
at Rated DC Blocking Voltage
@ TC = 125
°C
IRM
10
0.5
A
mA
I2t Rating for Fusing
(Note 1)
I2t
373
A2s
Typical Junction Capacitance
(Note 2)
Cj
300
pF
Typical Thermal Resistance Junction to Case
(Note 3)
RθJC
3.8
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +125
°C
Notes:
1. Non-repetitive, for t > 1.0ms and t < 8.3ms.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to case per element mounted on heatsink.
Diffused Junction
Low Reverse Leakage Current
Low Power Loss, High Efficiency
Surge Overload Rating to 300A Peak
Case to Terminal Isolation Voltage 1500V
UL Listed: Recognized Component Index,
File Number E95060
Case: Molded Plastic with Heatsink Internally
Mounted in the Bridge Encapsulation
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Symbols Marked on Case
Mounting: Through Hole for #10 Screw
Mounting Torque: 8.0 Inch-pounds Maximum
MP Weight: 23 grams (approx.)
MP-W Weight: 17 grams (approx.)
Mounting Position: Any
MP / MP-W
Dim
Min
Max
A
28.40
28.70
B
9.70
10.00
C
15.70
16.70
E
22.86
25.40
G
13.50
14.50
H
Hole for #10 screw
5.08
Nominal
J
17.50
18.50
K
10.90
11.90
L
0.97
1.07
M
30.50
—
P
17.60
18.60
All Dimensions in mm
POWER SEMICONDUCTOR
相關PDF資料 |
PDF描述 |
|---|---|
| MP2508W | 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| MP351W | 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE |
| MP3510W | 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| MP354W | 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE |
| MP4005W | 40 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MP2508G | 制造商:JGD 制造商全稱:Jinan Gude Electronic Device 功能描述:HIGH CURRENT 15 AMPS SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS |
| MP2508S | 制造商:RFE 制造商全稱:RFE international 功能描述:BRIDGE RECTIFIERS 10 Amps |
| MP2508W | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:SILICON BRIDGE RECTIFIERS |
| MP250A | 功能描述:晶體 25MHz 20pF 30ppm -20/70 RoHS:否 制造商:AVX 頻率:26 MHz 容差: 頻率穩(wěn)定性:50 PPM 負載電容:8 pF 端接類型:SMD/SMT 封裝 / 箱體:1210 (3225 metric) 工作溫度范圍:- 40 C to + 150 C 尺寸:2.5 mm W x 3.2 mm L x 0.85 mm H 封裝:Reel |
| MP250A-E | 功能描述:晶體 25MHz 20pF 30ppm -40/85 RoHS:否 制造商:AVX 頻率:26 MHz 容差: 頻率穩(wěn)定性:50 PPM 負載電容:8 pF 端接類型:SMD/SMT 封裝 / 箱體:1210 (3225 metric) 工作溫度范圍:- 40 C to + 150 C 尺寸:2.5 mm W x 3.2 mm L x 0.85 mm H 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。