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參數(shù)資料
| 型號(hào)： | MP1506W |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 橋式整流 |
| 英文描述： | 15 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 34K |
| 代理商： | MP1506W |
DS21313 Rev. E-3
1 of 2
MP15005/W - MP1510/W
MP15005/W - MP1510/W
15A BRIDGE RECTIFIER
Features
MP-W
C
A
G
E
B
H
(AC)
(+)
(-)
H
J
A
C
K
A
M
B
H
L
P
A
P
(AC)
(-)
(+)
MP
Mechanical Data
W Suffix Designates Wire Leads
No Suffix Designates Faston Terminals
MP / MP-W
Dim
Min
Max
A
28.40
28.70
B
9.70
10.00
C
15.70
16.70
E
22.86
25.40
G
13.50
14.50
H
Hole for #10 screw
5.08
Nominal
J
17.50
18.50
K
10.90
11.90
L
0.97
1.07
M
30.50
—
P
17.60
18.60
All Dimensions in mm
Diffused Junction
Low Reverse Leakage Current
Low Power Loss, High Efficiency
Surge Overload Rating to 300A Peak
Case to Terminal Isolation Voltage 1500V
UL Listed: Recognized Component Index,
File Number E95060
Case: Molded Plastic with Heatsink Internally
Mounted in the Bridge Encapsulation
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Symbols Marked on Case
Mounting: Through Hole for #10 Screw
Mounting Torque: 8.0 Inch-pounds Maximum
MP Weight: 23 grams (approx.)
MP-W Weight: 17 grams (approx.)
Mounting Position: Any
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MP15
005/W
MP15
01/W
MP15
02/W
MP15
04/W
MP15
06/W
MP15
08/W
MP15
10/W
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
@ TC = 55
°C
IO
15
A
Non-Repetitive Peak Forward Surge Current,
8.3 ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
300
A
Forward Voltage (per element)
@ IF = 7.5A
VF
1.1
V
Peak Reverse Current
@ TC = 25
°C
at Rated DC Blocking Voltage
@ TC = 125
°C
IRM
10
0.5
A
mA
I2t Rating for Fusing
(Note 1)
I2t
373
A2s
Typical Junction Capacitance
(Note 2)
Cj
200
pF
Typical Thermal Resistance Junction to Case
(Note 3)
RθJC
6.3
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +125
°C
Notes:
1. Non-repetitive, for t > 1.0ms and t < 8.3ms.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to case per element mounted on heatsink.
POWER SEMICONDUCTOR
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