參數(shù)資料
型號(hào): MP04HBT590-18
廠商: DYNEX SEMICONDUCTOR LTD
元件分類(lèi): 晶閘管
英文描述: Dual Thyristor, Thyristor/Diode Module
中文描述: 935 A, 1800 V, SCR
封裝: MP04, 7 PIN
文件頁(yè)數(shù): 2/10頁(yè)
文件大?。?/td> 228K
代理商: MP04HBT590-18
MP04---590
2/10
www.dynexsemi.com
Test Conditions
Half wave resistive load
T
case
= 75C
T
case
= 85C
T
case
= 75C
8.3ms half sine, T
j
= 125C
V
R
= 0
8.3ms half sine, T
j
= 125C
V
R
= 50% V
DRM
10ms half sine, T
j
= 125C
V
R
= 0
10ms half sine, T
j
= 125C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Symbol
I
T(AV)
I
T(RMS
I
TSM
I
2
t
I
TSM
I
2
t
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Units
A
A
A
kA
A
2
s
kA
A
2
s
kA
A
2
s
kA
A
2
s
V
Max.
595
505
935
16.8
1411 X 10
3
13.5
911 X 10
3
15.7
1232 X 10
3
12.6
794 X 10
3
3000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Parameter
Mean on-state current
RMS value
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
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