參數(shù)資料
型號: MP04HBT14
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 晶閘管
英文描述: Dual Thyristor, Thyristor/Diode Module
中文描述: 935 A, 1400 V, SCR
封裝: MP04, 7 PIN
文件頁數(shù): 3/10頁
文件大小: 228K
代理商: MP04HBT14
MP04---590
3/10
www.dynexsemi.com
Test Conditions
dc
Half wave
3 Phase
Mounting torque = 5Nm
with mounting compound
Reverse (blocking)
-
Mounting - M6
Electrical connections - M10
-
Parameter
Thermal resistance - junction to case
(per thyristor or diode)
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
Weight (nominal)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-hs)
T
vj
T
stg
-
-
Units
C/kW
C/kW
C/kW
C/kW
C
C
Nm (lb.ins)
Nm (lb.ins)
g
Max.
0.056
0.060
0.066
0.02
125
130
6 (35)
12 (106)
1580
Min.
-
-
-
-
-
–40
-
-
-
Units
mA
V/
μ
s
A/
μ
s
V
m
Test Conditions
At V
RRM
/V
DRM
, T
j
= 125C
To 67% V
DRM
, T
j
= 125C
From 67% V
DRM
to 1500A, gate source 1.5A,
t
r
= 0.5
μ
s, T
j
= 125C
At T
vj
= 125C. See note 1
At T
vj
= 125C. See note 1
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
50
1000
500
0.85
0.38
Min.
-
-
-
-
-
Note 1:
The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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