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參數(shù)資料
| 型號： | MP04HBP590-18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Enclosure NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.5"; External Width:9.8"; External Depth:6.3"; Enclosure Color:Clear |
| 中文描述： | 935 A, 1800 V, SCR |
| 封裝： | MP04, 7 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 228K |
| 代理商： | MP04HBP590-18 |
MP04---590
5/10
www.dynexsemi.com
Fig. 7 Transient thermal impedance - dc
Fig. 6 Gate characteristics
10
I
FGM
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
G
G
Region of
certain triggering
T
j
C
T
j
C
T
j
C
V
GD
Table gives pulse power P
GM
in Watts
Pulse width
μs
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
-
100
150
150
150
100
400
150
125
100
25
-
10W
5W
2W
1W
5W
Upper limit 99%
Lower limit 99%
0
0.01
0.02
0.03
0.04
0.05
0.06
0.001
0.01
0.1
1
10
100
1000
Time - (Seconds)
T
°
C
Fig. 5 Sub-cycle surge curves
0
2
4
6
8
10
12
14
16
18
0
10
20
30
40
50
60
Number of cycles @ 50Hz
P
Surge current (V
R
= 0)
Surge current (V
R
= 50% V
RRM
)
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0
200
400
600
800
1000
1200
Sine wave current (Average, per arm)
P
30
°
60
°
90
°
120
°
180
°
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