參數(shù)資料
型號： MP04HBN590-18
廠商： DYNEX SEMICONDUCTOR LTD
元件分類： 晶閘管
英文描述： PT 3C 3#16 SKT RECP
中文描述： 935 A, 1800 V, SCR
封裝： MP04, 7 PIN
文件頁數(shù)： 4/10頁
文件大?。?/td> 228K
代理商： MP04HBN590-18
MP04---590
4/10
www.dynexsemi.com
Fig. 3 Maximum (limit) on-state characteristics
Fig. 4 Sub-cycle surge curves
0.5
1.0
1.5
2.0
2.5
Instantaneous on-state voltage, V
T
- (V)
0
500
1000
1500
2000
2500
Measured under
pulse conditions
I
T
T
j
= 125
C Min
T
j
= 125
C Max
0
5
10
15
20
25
30
35
40
1
4
8
10
Pulse length, half sine wave (ms)
P
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I
2
t
2
s
6
)
2
3
5
6
7
9
I
TSM
(V
R
= 0)
I
TSM
(V
R
= 50% V
RRM
)
I
2
t (V
R
= 0)
I
2
t (V
R
= 50% V
RRM
)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
, T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.5
200
0.25
30
0.25
5
10
150
10
Units
V
mA
V
V
V
V
A
W
W
CURVES
相關(guān)PDF資料
PDF描述
MP04HBP590-18 Enclosure NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.5"; External Width:9.8"; External Depth:6.3"; Enclosure Color:Clear
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