參數(shù)資料
型號(hào): MP04HB910-28
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 參考電壓二極管
英文描述: Dual Rectifier Diode Module Preliminary Information
中文描述: 915 A, 2800 V, SILICON, RECTIFIER DIODE
封裝: MP04, 3 PIN
文件頁數(shù): 2/7頁
文件大小: 153K
代理商: MP04HB910-28
2/7
www.dynexsemi.com
MP04HB910
Half wave resistive load
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.060
Halfwave
T
vj
Virtual junction temperature
T
stg
Storage temperature range
-
Thermal resistance - junction to case
(per diode)
R
th(j-c)
Symbol
Parameter
Screw torque
6 (53)
-
Nm (lb.ins)
–40
150
o
C
Reverse (blocking)
-
150
o
C
3 Phase
-
0.066
o
C/W
-
0.056
o
C/W
Symbol
Parameter
Conditions
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
Units
Max.
915
A
T
case
= 85
o
C
830
A
T
case
= 100
o
C
695
A
T
case
= 75
o
C
1440
A
T
case
= 85
o
C
1305
A
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
T
case
= 75
o
C
10ms half sine; T
j
= 150
o
C
V
R
= 0
10ms half sine; T
j
= 150
o
C
V
R
= 50% V
RRM
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
1.28 x 10
6
A
2
s
16
kA
2.0 x 10
6
A
2
s
20
kA
V
isol
Isolation voltage
3000
V
Commoned terminals to base plate AC RMS, 1 min, 50Hz
Mounting
-
-
12 (106)
Nm (lb.ins)
Electrical connections
-
1580
g
-
-
Weight (nominal)
T
case
= 100
o
C
1090
A
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