參數(shù)資料
型號(hào): MP03XXX330-10
廠商: Dynex Semiconductor Ltd.
英文描述: Phase Control Dual SCR, SCR/Diode Modules
中文描述: 相位控制雙可控硅,SCR /二極管模塊
文件頁(yè)數(shù): 2/10頁(yè)
文件大?。?/td> 137K
代理商: MP03XXX330-10
2/10
MP03 XXX 330 Series
Symbol
Parameter
Conditions
Max.
Units
A
V
R
= 0
V
R
= 50% V
RRM
V
R
= 0
V
R
= 50% V
RRM
A
2
s
10.6
Symbol
Parameter
Conditions
Thermal resistance - case to heatsink
per thyristor or diode
3 phase
Max.
Symbol
Peak reverse and off-state current
From 67% V
to 600A
Gate source 10V, 5
Rise time 0.5
μ
s, T
j
=130
o
C
r
T
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
kA
8.5
0.56 x 10
6
A
2
s
0.36 x 10
6
10ms half sine;
T
j
= 130C
10ms half sine;
T
j
= 130C
Surge (non-repetitive) on-state current
I
TSM
I
2
t for fusing
I
2
t
dc
Thermal resistance - junction to case
per Thyristor or Diode
halfwave
R
th(j-c)
R
th(c-hs)
Mounting torque = 5Nm
with mounting compound
T
vj
Virtual junction temperature
Off-state (Blocking)
T
stg
Storage temperature range
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Isolation voltage
V
isol
0.11
o
C/W
o
C/W
0.12
2.5
kV
-40 to 130
o
C
o
C
130
0.05
o
C/W
0.13
o
C/W
Units
Conditions
Max.
At 1000A, T
case
= 25
o
C
1.50
V
At V
RRM
/V
DRM
, T
j
= 130
o
C
30
mA
To 67% V
DRM
T
j
= 130
o
C
200*
V/
μ
s
100
A/
μ
s
0.8
V
At T
vj
= 130
o
C
0.7
m
At T
vj
= 130
o
C
On-state slope resistance
V
T(TO)
Threshold voltage
Rate of rise of on-state current
dI/dt
Linear rate of rise of off-state voltage
dV/dt
I
RRM
/I
DRM
On-state voltage
V
TM
THERMAL & MECHANICAL RATINGS
DYNAMIC CHARACTERISTICS- THYRISTOR
SURGE RATINGS - PER ARM
Units
Parameter
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