參數(shù)資料
型號: MP03XXX190-08
廠商: Dynex Semiconductor Ltd.
英文描述: Phase Control Dual SCR, SCR/Diode Modules
中文描述: 相位控制雙可控硅,SCR /二極管模塊
文件頁數(shù): 2/10頁
文件大?。?/td> 122K
代理商: MP03XXX190-08
MP03 XXX 190 Series
2/10
Symbol
Parameter
Conditions
Max.
Units
A
V
R
= 0
V
R
= 50% V
RRM
V
R
= 0
V
R
= 50% V
RRM
A
2
s
I
2
t
10ms half sine;
T
j
= 125
o
C
10ms half sine;
T
j
= 125
o
C
Surge (non-repetitive) on-state current
I
TSM
I
2
t for fusing
Symbol
Parameter
Conditions
Linear rate of rise of off-state voltage
V
Units
Max.
mA
V/
μ
s
On-state voltage
30
V
TM
I
RRM
/I
DRM
Peak reverse and off-state current
To 60% V
DRM
T
j
= 125
o
C
At V
RRM
/V
DRM
, T
j
= 125
o
C
At 500A, T
case
= 25
o
C - See Note 1
Symbol
Parameter
Conditions
o
C/W
Units
o
C/W
o
C/W
Thermal resistance - case to heatsink
per Thyristor or Diode
R
th(c-hs)
R
th(j-c)
Virtual junction temperature
T
vj
o
C
o
C
T
sto
Storage temperature range
Mounting torque = 5Nm
with mounting compound
3 phase
halfwave
dc
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Max.
125
Rate of rise of on-state current
V
T(TO)
Threshold voltage
V
m
0.70
At T
vj
= 125
o
C - See Note 1
At T
vj
= 125
o
C - See Note 1
r
T
On-state slope resistance
-40 to 125
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
dV/dt
o
C/W
0.05
Isolation voltage
V
isol
2.5
Thermal resistance - junction to case
per Thyristor or Diode
5500
4200
151000
88200
A
A
2
s
0.21
0.22
0.23
kV
1.30
200*
A/
μ
s
100
0.88
dI/dt
From 67% V
to 400A Repetitive 50Hz
Gate source 20V, 20
Rise time 0.5
μ
s, T
j
=125
o
C
SURGE RATINGS - PER ARM
THERMAL & MECHANICAL RATINGS
DYNAMIC CHARACTERISTICS
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