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參數(shù)資料
| 型號： | MOSFETIRF6602 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET⑩ Power MOSFET(Vdss=20V) |
| 中文描述： | ⑩的DirectFET功率MOSFET（減振鋼板基本\u003d 20V的） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 131K |
| 代理商： | MOSFETIRF6602 |
Symbol
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JC
R
θ
J-PCB
Parameter
Typ.
–––
12.5
20
3.0
1.0
Max.
55
–––
–––
–––
–––
Units
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB mounted
°
C/W
DirectFET
TM
Power MOSFET
R
DS(on)
max
13m
@V
GS
= 10V
19m
@V
GS
= 4.5V
IRF6602
Parameter
Max.
20
11
8.8
88
2.3
1.5
18
± 20
Units
V
V
DS
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 70
°
C
I
DM
P
D
@T
C
= 25
°
C
P
D
@T
C
= 70
°
C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/
°
C
V
°
C
V
GS
T
J,
T
STG
-55 to + 150
Absolute Maximum Ratings
W
www.irf.com
1
Description
The IRF6602 combines the latest HEXFET
Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging
to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly
equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
DirectFET
ISOMETRIC
Thermal Resistance
04/24/02
V
DSS
20V
I
D
11A
8.8A
PD - 94363A
The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount
Techniques
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