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參數(shù)資料
| 型號： | MOD1013 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 25 A, 600 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 65K |
| 代理商： | MOD1013 |
221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com E-mail Address - sales@sensitron.com
tSENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 2025, REV. -
600 VOLT, 24 AMP IGBT 3-PHASE BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=25
0C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 250 A, VGE = 0V
BVCES
600
-
V
Continuous Collector Current
TC = 25
OC
TC = 90
OC
IC
-
25
(1)
A
Pulsed Collector Current, 1mS
ICM
-
60
A
Short Circuit time, VGE = 15V, VCE = 500V, Tj = 125
OC
di/dt < 300 A/?sec, IC< 300A
tsc
-
10
sec
Gate to Emitter Voltage
VGE
-
+/-20
V
Gate-Emitter Leakage Current, VGE = +/-20V
IGES
-
+/- 100
nA
Gate Threshold Voltage, IC=2mA
V GE(TH)
4.0
-
7.0
V
Zero Gate Voltage Collector Current
VCE = 600 V, VGE=0V Ti=25
oC
VCE = 480 V, VGE=0V Ti=125
oC
ICES
-
0.25
3.0
mA
Collector to Emitter Saturation Voltage,
TC = 25
OC
IC = 25A, VGE = 15V,
TC = 125
OC
VCE(SAT)
-
2.7
2.3
V
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cies
Coes
Cres
-
3100
250
40
-
pF
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn off Energy Loss
(Tj = 125
OC, I
C = 25A, VGE = 15V, inductive load, VCC =
300 V, RG = 10
td(on)
tr
td(off)
tf
Eoff
-
50
200
150
1.5
-
2.5
nsec
mJ
Maximum Thermal Resistance
RθJC
-
1.0
oC/W
MOD1013
12
7
8
9
10
11
1
6
5
4
3
2
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