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參數(shù)資料
| 型號： | MNT-LB32P20 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | 32 A, 200 V, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 2, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 24K |
| 代理商： | MNT-LB32P20 |
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ton
Turn–on Time
toff
Turn-off Time
MNT - LB32P16
MNT - LB32P20
Tentative 8/99
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
BVDSX
Drain – Source Breakdown Voltage
BVGSS
Gate – Source Breakdown Voltage
VGS(OFF)
Gate – Source Cut–Off Voltage
VDS(SAT)* Drain – Source Saturation Voltage
IDSX
Drain – Source Cut–Off Current
yfs*
Forward Transfer Admittance
–160
–200
±14
–0.1
–1.5
–12
–10
2
6
* Pulse Test: Pulse Width = 300
ms , Duty Cycle 2%.
VGS = 10V
LB32P16
ID = –10mA
LB32P20
VDS = 0
IG = ±100mA
VDS = –10V
ID = –100mA
VGS = –10V
ID = –32A
VDS = –160V
LB32P16
VGS = 10V
VDS = –200V
LB32P20
VDS = –10V
ID = –5A
V
mA
S
Characteristic
Test Conditions
TYP
Unit
P-Ch
TBE
VDS = –10V
f = 1MHz
VDS = –20V
ID = –7A
pF
ns
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
G a t e 1
G a t e 2
S o u r c e 2
S o u r c e 1
D r a i n 1
S 2
G 2
D
G 1
S 1
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