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參數(shù)資料
| 型號： | MNT-LB32N20 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | 32 A, 200 V, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 2, SMARTPACK-5 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | MNT-LB32N20 |
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ton
Turn–on Time
toff
Turn-off Time
MNT - LB32N16
MNT - LB32N20
Tentative 6/99
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
BVDSX
Drain – Source Breakdown Voltage
BVGSS
Gate – Source Breakdown Voltage
VGS(OFF)
Gate – Source Cut–Off Voltage
VDS(SAT)* Drain – Source Saturation Voltage
IDSX
Drain – Source Cut–Off Current
yfs*
Forward Transfer Admittance
160
200
±14
0.1
1.5
12
10
26
* Pulse Test: Pulse Width = 300
s , Duty Cycle ≤ 2%.
VGS = –10V
LB32N16
ID = 10mA
LB32N20
VDS = 0
IG = ±100A
VDS = 10V
ID = 100mA
VGS = 10V
ID = 32A
VDS = 160V
LB32N16
VGS = –10V
VDS = 200V
LB32N20
VDS = 10V
ID = 5A
V
mA
S
Characteristic
Test Conditions
TYP
Unit
N-Ch
TBE
VDS = 10V
f = 1MHz
VDS = 20V
ID = 7A
pF
ns
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Gate 1
Gate 2
Source 2
Source 1
Drain 1
S2
G2
D
G1
S1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MNT-LB32N16 | 32 A, 160 V, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| MNT-LB32P16 | 32 A, 160 V, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| MNT-LB32P20 | 32 A, 200 V, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| MNT-LC32016-C4 | 32 A, 160 V, 8 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| MNT-LC32020-C4 | 32 A, 8 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
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參數(shù)描述 |
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