參數(shù)資料
型號: MMVL409T1
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Silicon Tuning Diode(調(diào)諧二極管)
中文描述: VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
封裝: PLASTIC, CASE 477-02, 2 PIN
文件頁數(shù): 2/3頁
文件大小: 43K
代理商: MMVL409T1
MMVL409T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 Adc)
V
(BR)R
20
Vdc
Reverse Voltage Leakage Current
(V
R
= 15 Vdc)
I
R
0.1
Adc
Diode Capacitance Temperature Coefficient
(V
R
= 3.0 Vdc, f = 1.0 MHz)
TC
C
300
ppm/
°
C
C
t
, Diode Capacitance
V
R
= 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
V
R
= 3.0 Vdc
f = 50 MHz
C
R
, Capacitance Ratio
C
3
/C
8
(Note 2)
f = 1.0 MHz
Device
Min
Nom
Max
Min
Min
Max
MMVL409T1
26
29
32
200
1.5
1.9
2. C
R
is the ratio of C
t
measured at 3 Vdc divided by C
t
measured at 8 Vdc.
TYPICAL CHARACTERISTICS
Figure 1. Diode Capacitance
40
32
24
16
8
01
3
10
30
100
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Figure of Merit
f, FREQUENCY (MHz)
Figure 3. Leakage Current
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 4. Diode Capacitance
Q
10
1000
100
10
100
1000
,
IR
100
60
60
0.01
0.006
0.001
0
+40
+100
C 1.04
0.97
75
1.02
1.00
0.98
0.96
25
T
A
, AMBIENT TEMPERATURE (
°
C)
+25
+75
+125
V
R
= 3.0 Vdc
f = 1.0 MHz
f = 1.0 MHz
T
A
= 25
°
C
V
R
= 3 Vdc
T
A
= 25
°
C
V
R
= 15 Vdc
+120 +140
+80
+60
+20
40
20
0.1
0.06
1.0
0.6
10
6.0
20
2.0
0.2
0.02
0.002
50
0
+50
+100
1.03
1.01
0.99
C
2
20
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