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參數(shù)資料
| 型號： | MMUN2238LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Bias Resistor Transistor |
| 中文描述： | 偏置電阻晶體管 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 146K |
| 代理商： | MMUN2238LT1 |
LESHAN RADIO COMPANY, LTD.
MMUN2211S–4/11
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
100
10
1
0.1
0.01
0.0010
1
2
3
4
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current vs. Input Voltage
5
6
7
8
9
10
VO = 5 V
I
TA = –25
°
C
75
°
C
25
°
C
1000
100
101
10
100
IC, COLLECTOR CURRENT (mA)
50
0
10
20
30
40
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 A
TA = 25
°
C
VCE = 10 V
Figure 1. Derating Curve
250
200
150
100
50
0
–50
0
50
100
150
TA, AMBIENT TEMPERATURE (5
°
C)
Figure 2. VCE(sat) vs. IC
P
C
h
R
θ
JA= 625
°
C/W
TA = 75
°
C
–25
°
C
25
°
C
10
0
20
30
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
10
1
0.1
40
50
Figure 3. DC Current Gain
V
TA = –25
°
C
75
°
C
25
°
C
VO = 0.2 V
1
0.1
0.01
0.0010
20
40
60
80
IC, COLLECTOR CURRENT (mA)
IC/IB = 10
V
(
TA = –25
°
C
75
°
C
25
°
C
Figure 4. Output Capcitance
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMUN2238LT1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2240L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Transistors with Monolithic Bias Resistor Network |
| MMUN2240LT1G | 制造商:ON Semiconductor 功能描述:NPN DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NPN DIGITAL TRANSISTOR (B |
| MMUN2241 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor |
| MMUN2241LT1 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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