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參數(shù)資料
| 型號(hào)： | MMUN2231 |
| 廠商： | WEITRON INTERNATIONAL CO., LTD. |
| 英文描述： | Bias Resistor Transistor NPN Silicon |
| 中文描述： | 偏置電阻晶體管NPN硅 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 388K |
| 代理商： | MMUN2231 |
WEITRON
http://www.weitron.com.tw
ELECTRICAL CHARACTERISTICS
(T
A
= 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB= 50 V IE = 0)
Collector-Emitter Cutoff Current (VCE= 50 V IB= 0)
Emitter-Base Cutoff Current
(VEB= 6.0 V, IC = 0)
Symbol
Min
Typ
Max
Unit
ICBO
ICEO
IEBO
-
-
-
-
100
500
nAdc
nAdc
mAdc
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
4.0
0.1
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 2.)
(IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS
(Note 2.)
V
(BR)CBO
50
50
-
-
-
-
Vdc
Vdc
V
(BR)CEO
DC Current Gain
(VCE= 10 V IC = 5.0 mA)
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
140
350
350
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC
= 10 mA, IB = 5 mA) MMUN2230/MMUN2231
(IC
= 10 mA, IB = 1 mA) MMUN2215/MMUN2216/MMUN2232
MMUN2233/MMUN2234/MMUN2235/MMUN2238
Output Voltage (on)
(VCC= 5.0 V VB= 2.5 V RL= 1.0 k
)
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0 %.
VCE(sat)
-
-
0.25
Vdc
(VCC= 5.0 V VB= 3.5 V RL= 1.0 k )
(VCC= 5.0 V VB= 5.0 V RL= 1.0 k )
VOL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
MMUN2211
Series
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMUN2232 | Bias Resistor Transistor NPN Silicon |
| MMUN2233 | Bias Resistor Transistor NPN Silicon |
| MMUN2234 | Bias Resistor Transistor NPN Silicon |
| MMUN2235 | Bias Resistor Transistor NPN Silicon |
| MMUN2238 | Bias Resistor Transistor NPN Silicon |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMUN2231LT1 | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2231LT1 WAF | 制造商:ON Semiconductor 功能描述: |
| MMUN2231LT1G | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2231RLT1 | 制造商:ETL 制造商全稱(chēng):E-Tech Electronics LTD 功能描述:Bias Resistor Transistor |
| MMUN2232 | 制造商:WEITRON 制造商全稱(chēng):Weitron Technology 功能描述:Bias Resistor Transistor |
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