參數(shù)資料
型號(hào)： MMUN2134LT3
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： CASE 318-08, 3 PIN
文件頁(yè)數(shù)： 7/7頁(yè)
文件大小： 186K
代理商： MMUN2134LT3
MMUN2111LT1 Series
http://onsemi.com
740
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2114LT1
35
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
010
20
30
40
50
100
10
1
02
4
6
8
10
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
2
4
6
8 1015 202530
4045 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in
,INPUT
VOL
TAGE
(VOL
TS)
I C
,COLLECT
OR
CURRENT
(mA)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
0
20
406080
V CE(sat)
,MAXIMUM
COLLECT
OR
VOL
TAGE
(VOL
TS)
Figure 18. DC Current Gain
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
C ob
,CAP
ACIT
ANCE
(pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
f = 1 MHz
lE = 0 V
TA = 25°C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
TA =-25°C
75°C
25°C
TA =75°C
25°C
-25°C
VO = 5 V
VO = 0.2 V
TA =-25°C
25°C
75°C
IC/IB =10
h FE
,DC
CURRENT
GAIN
(NORMALIZED)
1
10
100
IC, COLLECTOR CURRENT (mA)
-25°C
25°C
TA =75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
0
2
4
6
8
1520 40 5060 708090
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