- 您現(xiàn)在的位置：買賣IC網 > PDF目錄383626 > MMSTA56-7-F (DIODES INC) PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MMSTA56-7-F |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEN, ULTRA SMALL, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 200K |
| 代理商： | MMSTA56-7-F |
DS30167 Rev. 9 - 2
2 of 4
MMSTA55/MMSTA56
www.diodes.com
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
MMSTA55
MMSTA56
MMSTA55
MMSTA56
V
(BR)CBO
-60
-80
-60
-80
-4.0
V
I
C
= -100
μ
A, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
Collector Cutoff Current
V
(BR)EBO
V
I
E
= -100
μ
A, I
C
= 0
V
CB
= -60V, I
E
= 0
V
CB
= -80V, I
E
= 0
V
CE
= -60V, I
BO
= 0V
V
CE
= -80V, I
BO
= 0V
MMSTA55
MMSTA56
MMSTA55
MMSTA56
I
CBO
-100
nA
Collector Cutoff Current
I
CEX
-100
nA
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
100
I
C
= -10mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
I
C
= -100mA, I
B
= -10mA
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
-0.25
-1.2
V
V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
50
MHz
V
= -1.0V, I
C
= -100mA,
f = 100MHz
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Ordering Information
(Note 4 & 6)
Device
Packaging
Shipping
MMSTA55-7-F
MMSTA56-7-F
SOT-323
3000/Tape & Reel
Notes: 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product
manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2x
Y
K2x = Product Type Marking Code, e.g. K2H = MMSTA55
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
Jan
1
Feb
2
March
3
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1998
J
1999
K
2000
L
2001
M
2002
N
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
相關PDF資料 |
PDF描述 |
|---|---|
| MMSTA55 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMSTA56 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMSTA56 | PNP General Purpose Transistor |
| MMSTA63-7-F | PNP SURFACE MOUNT DARLINGTON TRANSISTOR |
| MMSTA64-7-F | PNP SURFACE MOUNT DARLINGTON TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMSTA56T146 | 功能描述:兩極晶體管 - BJT PNP 80V 500MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMSTA63 | 制造商:ROHM Semiconductor 功能描述:DARLINGTON PNP SMD (Surface Mount) Transistor SOT-23 - free partial T/R at 500. |
| MMSTA63_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SURFACE MOUNT DARLINGTON TRANSISTOR |
| MMSTA63_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SURFACE MOUNT DARLINGTON TRANSISTOR |
| MMSTA63-7 | 功能描述:達林頓晶體管 -500V 200mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。