參數(shù)資料
型號： MMSTA56-13
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù)： 2/3頁
文件大?。?/td> 71K
代理商： MMSTA56-13
DS30167 Rev. 6 - 2
2 of 3
MMSTA55/MMSTA56
www.diodes.com
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
MMSTA55
MMSTA56
V(BR)CBO
-60
-80
V
IC = -100
mA, IE = 0
Collector-Emitter Breakdown Voltage
MMSTA55
MMSTA56
V(BR)CEO
-60
-80
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-4.0
V
IE = -100
mA, IC = 0
Collector Cutoff Current
MMSTA55
MMSTA56
ICBO
-100
nA
VCB = -60V, IE = 0
VCB = -80V, IE = 0
Collector Cutoff Current
MMSTA55
MMSTA56
ICEX
-100
nA
VCE = -60V, IBO = 0V
VCE = -80V, IBO = 0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
100
IC = -10mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.25
V
IC = -100mA, IB = -10mA
Base-Emitter Saturation Voltage
VBE(SAT)
-1.2
V
IC = -100mA, VCE = -1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
50
MHz
VCE = -1.0V, IC = -100mA,
f = 100MHz
Electrical Characteristics @ TA = 25°C unless otherwise specified
Ordering Information (Note 4)
Device
Packaging
Shipping
MMSTA55-7
MMSTA56-7
SOT-323
3000/Tape & Reel
Notes:
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: MMSTA56-7-F.
Marking Information
K2x
YM
K2x = Product Type Marking Code, e.g. K2H = MMSTA55
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMSTA56-7 功能描述:兩極晶體管 - BJT -80V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMSTA56-7-F 功能描述:兩極晶體管 - BJT -80V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMSTA56T146 功能描述:兩極晶體管 - BJT PNP 80V 500MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMSTA63 制造商:ROHM Semiconductor 功能描述:DARLINGTON PNP SMD (Surface Mount) Transistor SOT-23 - free partial T/R at 500.
MMSTA63_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SURFACE MOUNT DARLINGTON TRANSISTOR
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