參數(shù)資料
型號(hào)： MMSTA06
廠商： Diodes Inc.
英文描述： NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： npn型小信號(hào)晶體管表面貼裝
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 38K
代理商： MMSTA06
DS30168 Rev. B-1
1 of 1
MMSTA05/MMSTA06
MMSTA05/MMSTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMSTA55/MMSTA56)
Ideal for Medium Power Amplification and
Switching
Ultra-Small Surface Mount Package
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
MMSTA05 Marking K1H, K1G
MMSTA06 Marking K1G
Weight: 0.006 grams (approx.)
SOT-323
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
All Dimensions in mm
Max
0.30
0.40
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.20
1.40
1.80
2.20
0.0
0.10
0.90
1.00
0.25
0.40
0.10
0.25
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
MMSTA05
60
60
MMSTA06
80
80
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
4.0
500
200
625
K/W
C
-55 to +150
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
MMSTA05
MMSTA06
MMSTA05
MMSTA06
V
(BR)CBO
60
80
60
80
4.0
V
I
C
= 100 A, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
Collector Cutoff Current
V
(BR)EBO
V
I
E
= 100 A, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 60V, I
BO
= 0V
V
CE
= 80V, I
BO
= 0V
MMSTA05
MMSTA06
MMSTA05
MMSTA06
I
CBO
100
nA
Collector Cutoff Current
I
CES
100
nA
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
100
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 100mA, I
B
= 10mA
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
0.25
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
100
MHz
V
= 2.0V, I
C
= 10mA,
f = 100MHz
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300 s, duty cycle
2%.
N
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMSTA06-7 功能描述:兩極晶體管 - BJT 80V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMSTA06-7-F 功能描述:兩極晶體管 - BJT 80V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMSTA06T146 功能描述:兩極晶體管 - BJT NPN 80V 500MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMSTA13 制造商:ROHM 功能描述:DARLINGTON NPN SMD (Surface Mount) Transistor SOT-23 制造商:ROHM 功能描述:DARLINGTON NPN SMD (Surface Mount) Transistor SOT-23 - free partial T/R at 500.
MMSTA13_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SURFACE MOUNT DARLINGTON TRANSISTOR
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