參數(shù)資料
型號： MMST4126-13
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù)： 2/3頁
文件大小： 65K
代理商： MMST4126-13
DS30161 Rev. 5 - 2
2 of 3
MMST4126
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
-25
V
IC = -10
A, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-25
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-4.0
V
IE = -10
A, IC = 0
Collector Cutoff Current
ICBO
-50
nA
VCB = -20V, IE = 0V
Emitter Cutoff Current
IEBO
-50
nA
VEB = -3.0V, IC = 0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
120
60
360
IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.40
V
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.95
V
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Small Signal Current Gain
hfe
120
480
VCE = 1.0V, IC = -2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
250
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
4.0
dB
VCE = -5.0V, IC = -100
A,
RS = 1.0k
, f = 1.0kHz
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Date Code Key
K2B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K2B
YM
Marking Information
Notes:
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMST4126-7-F.
Device
Packaging
Shipping
MMST4126-7
SOT-323
3000/Tape & Reel
(Note 4)
Ordering Information
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
相關PDF資料
PDF描述
MMST4401-13 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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MMST4401 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMST4401 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數(shù)
參數(shù)描述
MMST4126-7 功能描述:兩極晶體管 - BJT -25V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST4126-7-F 功能描述:兩極晶體管 - BJT -25V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST4126T146 功能描述:兩極晶體管 - BJT SMT PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST4401 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST4401_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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