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參數(shù)資料
| 型號： | MMST3906 |
| 廠商： | RECTRON LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 613K |
| 代理商： | MMST3906 |
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS (2)
ON CHARACTERISTICS (2)
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (IC= -1.0mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= -10Adc, IE= 0)
Emitter-Base Breakdown Voltage (IE= -10Adc, IC= 0)
Collector Cutoff Current (VCE= -40Vdc,IB=0)
Collector Cutoff Current (VCB= -40Vdc, IE= 0)
Emitter Cutoff Current (VEB= -5Vdc, IC= 0)
Base Cutoff Current (VCE= -30Vdc, VEB(off)= -3.0Vdc
DC Current Gain (IC= -100Adc, VCE= -1.0Vdc)
Collector-Emitter Saturation Voltage (IC= -10mAdc, IB= -1.0mAdc)
(IC= -1.0mAdc, VCE= -1.0Vdc)
(IC= -10mAdc, VCE= -1.0Vdc)
(IC= -50mAdc, VCE= -1.0Vdc)
(IC= -100mAdc, VCE= -1.0Vdc)
V(BR)CEO
-40
-
Vdc
V(BR)CBO
-40
-
Vdc
V(BR)EBO
-5.0
-
Vdc
ICEO
ICBO
IEBO
IBL
-
-0.1
-
-0.1
-50
Adc
Vdc
Adc
nAdc
fT
300
hFE
80
60
-
100
60
30
300
VCE(sat)
-
-0.20
-
-0.30
Adc
Symbol
Min
Max
Unit
(IC= -50mAdc, IB= -5.0mAdc)
Base-Emitter Saturation Voltage (IC= -10mAdc, IB= -1.0mAdc)
Current-Gain-Bandwidth Product (IC= -10mAdc, VCE= -20Vdc, f= 1.0kHz)
Cibo
pF
MHz
td
tr
ts
tf
3.0
60
s
NF
-
4.0
ns
dB
ns
hie
k
hre
-
4.5
X 10-4
hfe
-
10
2.0
12
-
hoe
0.1
10
100
400
225
75
35
Input Capacitance (VEB=-0.5Vdc, IC= 0, f= 1.0MHz)
Cobo
Output Capacitance (VCB=-5.0Vdc, IE= 0, f= 1.0MHz)
Input Impedance (IC= 1.0mAdc, VCE=10Vdc, f=1.0kHz)
Voltage Feedback Ratio (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz)
Small-Signal Current Gain (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz)
Output Admittance (IC= 10mAdc, VCE= 10Vdc, f= 1.0kHz)
Noise Figure (IC= -100Adc, VCE= -5.0Vdc, RS= 1.0k, f= 1.0kHz)
(VCC= -3Vdc, VBE= -0.5Vdc, IC= -10mAdc, IB1= -1mAdc)
(VCC= -3Vdc, IC= -10mAdc, IB1= IB2= -1mAdc)
Vdc
VBE(sat)
-0.65
-0.85
-
-0.95
(IC= -50mAdc, IB= -5.0mAdc)
Delay Time
Rise Time
Storage Time
Fall Time
RECTRON
NOTES : 2. Pulse Test: Pulse Width<300
s,Duty Cycle<2.0%
-
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMST3906_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST3906_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Small Signal Transistors |
| MMST3906_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST3906-7 | 功能描述:兩極晶體管 - BJT -40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMST3906-7F | 制造商:Diodes Incorporated 功能描述: |
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