參數(shù)資料
型號： MMST2907A
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 小信號晶體管
英文描述： 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/2頁
文件大小： 0K
代理商： MMST2907A
MMST2907A
PNP Small Signal
Transistors
Features
Power dissipation: 200mW (Tamb=25
℃)
Collector current: -0.6A
Marking Code: K3F
Operating and Storage junction temperature range
-55
℃ to + 150℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS (2)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-10mAdc, IB=0)
-60
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-10uAdc, IE=0)
-60
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=-10uAdc, IC=0)
-5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-50Vdc, IE=0Vdc)
---
-0.01
Adc
ICEO
Collector Cutoff Current
(VCE=-35Vdc, IB=0Vdc)
---
-0.05
Adc
IEBO
Emitter Cutoff Current
(VEB=-3Vdc, IC=0Vdc)
---
-0.01
Adc
hFE
DC Current Gain
(IC=-150mAdc, VCE=-10Vdc)
(IC=-1mAdc, VCE=-10Vdc)
100
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
---
-0.6
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
---
-1.2
Vdc
fT
Current Gain-Bandwidth Product
(VCE=-20Vdc, IC=-50mAdc, f=100MHz)
200
---
MHz
Cob
Output Capacitance
(VCB=-10Vdc, f=1.0MHz, IE=0)
---
8
pF
td
Delay Time
tr
Rise Time
VCC=-30V,IC=-150mA,
VBE(off)=-0.5V,IB1=-15mA
---
10
25
ns
ts
Storage Time
tf
Fall Time
VCC=-30V, IC=-150mA,
IB1=IB2=-15mA
---
80
30
ns
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 2
2006/05/13
SOT-323
Suggested Solder
Pad Layout
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.012
.016
.30
.40
A
C
B
D
E
F
G
H
J
1.90
0.70
0.90
0.65
DIMENSIONS
K
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMST2907A_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST2907A_11 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Small Signal Transistors
MMST2907A_2 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST2907A-7 功能描述:兩極晶體管 - BJT -60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST2907A-7-F 功能描述:兩極晶體管 - BJT -60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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