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參數(shù)資料
| 型號(hào)： | MMSF5P02HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 8700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 208K |
| 代理商： | MMSF5P02HDR2 |
MMSF5P02HD
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0)
(1) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
10
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
25
Adc
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(1) (3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.7
—
0.9
2.6
1.4
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0)
(1) (3)
(VGS = 4.5 Vdc, ID = 6.4 Adc)
(VGS = 2.5 Vdc, ID = 5.1 Adc)
RDS(on)
—
22
35
30
45
m
On–State Drain Current
(VDS ≤ 5.0 V, VGS = 4.5 V)
(VDS ≤ 5.0 V, VGS = 2.5 V)
ID(on)
10
5.0
—
A
Forward Transconductance (VDS = 9.0 Vdc, ID = 6.4 Adc)
(1)
gFS
14
18
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
16 Vdc V
0 Vdc
Ciss
—
1400
1960
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
925
1300
Transfer Capacitance
f = 1.0 MHz)
Crss
—
370
520
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
6 0 Vd
I
1 0 Ad
td(on)
—
19
40
ns
Rise Time
(VDD = 6.0 Vdc, ID = 1.0 Adc,
VGS =4 5Vdc
tr
—
28
55
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 6.0 ) (1)
td(off)
—
130
200
Fall Time
G
)( )
tf
—
90
150
Gate Charge
See Figure 8
(V
6 0 Vd
I
6 4 Ad
QT
—
27.3
38
nC
See Figure 8
(VDS = 6.0 Vdc, ID = 6.4 Adc,
Q1
—
3.4
—
( DS
, D
,
VGS = 4.5 Vdc) (1)
Q2
—
12
—
Q3
—
8.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 2.5 Adc, VGS = 0 Vdc) (1)
(IS = 2.5 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.77
0.6
1.2
—
Vdc
Reverse Recovery Time
See Figure 15
(I
2 5 Ad
V
0 Vd
trr
—
95
180
ns
See Figure 15
(IS = 2.5 Adc, VGS = 0 Vdc,
ta
—
35
—
( S
,
GS
,
dIS/dt = 100 A/s) (1)
tb
—
60
—
Reverse Recovery Stored Charge
QRR
—
0.151
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
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