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參數(shù)資料
| 型號： | MMSF5P02HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 8700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 277K |
| 代理商： | MMSF5P02HDR2 |
MMSF5P02HD
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
VGS =
8
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
versus Voltage
2.0
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
12
8.0
10
6.0
VGS, GATETOSOURCE VOLTAGE (VOLTS)
3.0
1.0
4.0
2.0
0
VGS, GATETOSOURCE (VOLTS)
0.06
0.04
0.02
0
ID, DRAIN CURRENT (AMPS)
2.0
0
0.04
0.02
0
4.0
25
50
TJ, JUNCTION TEMPERATURE (°C)
2.0
1.5
1.0
0.5
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
4.0
0
1000
100
10
1.0
16
0
I D
,DRAIN
CURRENT
(AMPS)
I
(W)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
0.5
1.0
1.5
2.5
1.5
2.0
6.0
12
2.0
4.0
6.0
8.0
10
6.0
8.0
,DRAINT
OSOURCE
RESIST
ANCE
R
DS(on)
50
100
75
8.0
12
20
I DSS
,LEAKAGE
(nA)
,DRAIN
CURRENT
(AMPS)
D
R
DS(on)
125
150
(NORMALIZED)
TJ = 25°C
VGS = 4.5 V
2.5 V
VGS = 4.5 V
ID = 5.1 A
25
°C
100
°C
TJ = 125°C
VGS = 0 V
ID = 6.4 A
TJ = 25°C
TJ = 55°C
100
°C
25
°C
VDS ≥ 10 V
1.7 V
1.9 V
2.1 V
2.3 V
TJ = 25°C
2.5 V
2.7 V
3.1 V
4.5 V
3.7 V
0.06
10
12
8.0
10
4.0
2.0
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| MMSF7N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 8.0 AMPERES 30 VOLTS |
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