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參數(shù)資料
| 型號： | MMSF4P01HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 12 V, 0.09 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 297K |
| 代理商： | MMSF4P01HDR2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS P-Channel
Field Effect Transistors
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
12
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
12
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 8.0
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
5.1
3.3
26
Adc
Apk
Total Power Dissipation @ TA = 25°C (2)
PD
2.5
Watts
Operating and Storage Temperature Range
– 55 to 150
°C
Thermal Resistance — Junction to Ambient (2)
R
θJA
50
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
DEVICE MARKING
S4P01
(1) Negative sign for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMSF4P01HDR2
13
″
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MMSF4P01HD/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
D
S
G
CASE 751–05, Style 13
SO–8
MMSF4P01HD
SINGLE TMOS POWER FET
4.0 AMPERES
12 VOLTS
RDS(on) = 0.08 OHM
Motorola Preferred Device
N–C
1
2
3
4
8
7
6
5
Top View
Source
Gate
Drain
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
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