參數(shù)資料
型號: MMSF4205R2
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 8.8 A, 20 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: CASE 751-06, SO-8
文件頁數(shù): 5/12頁
文件大?。?/td> 256K
代理商: MMSF4205R2
MMSF4205
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
20
12.1
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70°C)
IDSS
1.0
5.0
Adc
GateBody Leakage Current (VGS = ± 12 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.6
0.8
2.7
Vdc
mV/
°C
Static DraintoSource OnResistance
(VGS = 4.5 Vdc, ID = 10 Adc)
(VGS = 2.5 Vdc, ID = 8.8 Adc)
RDS(on)
11
16
14
20
m
Forward Transconductance (VDS = 10 Vdc, ID = 10 Adc)
gFS
36
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
16 Vd
V
0Vd
Ciss
2600
3640
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
1190
1670
Transfer Capacitance
f = 1.0 MHz)
Crss
720
1010
SWITCHING CHARACTERISTICS(2)
TurnOn Delay Time
td(on)
21
29
ns
Rise Time
(VDD = 10 Vdc, ID = 1.0 Adc,
VGS =45Vdc
tr
49
69
TurnOff Delay Time
VGS = 4.5 Vdc,
RG = 6.0 ) (1)
td(off)
137
192
Fall Time
RG
6.0
) (1)
tf
150
210
Gate Charge
QT
60
70
nC
(VDS = 10 Vdc, ID = 10 Adc,
Q1
5.0
(VDS
10 Vdc, ID
10 Adc,
VGS = 4.5 Vdc) (1)
Q2
29
Q3
13
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage(1)
(IS = 2.1 Adc, VGS = 0 Vdc) (1)
(IS = 2.1 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.7
0.6
1.2
Vdc
Reverse Recovery Time
trr
80
100
ns
(IS = 2.1 Adc, VGS = 0 Vdc,
ta
25
(IS
2.1 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s) (1)
tb
42
Reverse Recovery Stored Charge
QRR
0.083
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
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