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參數(shù)資料
| 型號(hào)： | MMSF4205R2 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 8.8 A, 20 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 195K |
| 代理商： | MMSF4205R2 |
MMSF4205
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
10 V
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
8
16
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
02
0
8
16
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2
04
10
0
0.012
04
8
16
0.020
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.0
412
16
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 100°C
25
°C
–55
°C
TJ = 25°C
VGS = 0 V
ID = 8.8 A
TJ = 25°C
VGS = 2.5 V
ID = 8.8 A
3
68
4.5 V
– 50
– 25
0
25
50
75
100
125
150
TJ = 125°C
1.0
10
20
100
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.2
0.4
1.2
0.6
1.0
1.4
1.6
2.0
4
12
4
12
20
0.008
0.004
0.008
0.012
0
0.5
0
0.01
0.020
0.004
12
25
°C
0.8
1.8
VGS = 10 V thru 1.7 V
TJ = 25°C
1.9 V
2.3 V
2.5 V
3.1 V
4.5 V
1
0
20
10000
8
2.1 V
1.7 V
0.016
0.1
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參數(shù)描述 |
|---|---|
| MMSF4N01HD | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS MOSFET 5.8 AMPERES 20 VOLTS |
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| MMSF5N03HD | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 5.0 AMPERES 30 VOLTS |
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