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參數(shù)資料
| 型號： | MMSF1310R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 243K |
| 代理商： | MMSF1310R2 |
MMSF1310
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
10 V
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DSon(
)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
8
16
20
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
02
0
8
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2
04
10
0
0.04
01
2
4
0.02
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus
Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
1.5
2.0
515
1E10
1E09
1E08
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(A)
VDS ≥ 10 V
TJ = 125°C
25
°C
55
°C
TJ = 25°C
VGS = 0 V
ID = 10 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
ID = 10 A
5
68
10 V
50
25
0
25
50
75
100
125
150
TJ = 125°C
1.0
30
100
°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
0.2
0.4
1.2
0.6
1.0
1.4
1.6
2.0
4
12
4
12
20
0.02
0.005
0.01
0
0.5
0
1E11
0.05
0.01
3
25
°C
0.8
1.8
TJ = 25°C
VGS = 2.3 V
2.7 V
1
0
16
5
1E06
10
20
25
2.9 V
3.1 V
3.5 V
4.5 V
34
0.015
0.03
W
1E07
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