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參數(shù)資料
| 型號： | MMPQ3725 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 751B-05, SO-16 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | MMPQ3725 |
Quad Core Driver
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
40
Vdc
Collector–Emitter Voltage
VCES
60
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
IC
1.0
Adc
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
Each
Transistor
Four
Transistors
Equal Power
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
0.6
4.8
1.4
11.2
Watts
mW/
°C
Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.0
8.0
2.5
2.0
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES
60
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
ICBO
—
0.5
mAdc
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1
Publication Order Number:
MMPQ3725/D
MMPQ3725
ON Semiconductor Preferred Device
CASE 751B–05, STYLE 4
SO–16
1
16
1
2
3
4
5
6
7
8
10
11
12
13
14
15
16
9
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| MMPQ3725/L99Z | 1200 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ3725/S62Z | 1200 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ3799R1 | 200 mA, 60 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SO-16 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMPQ3725 WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ3904 | 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ3904_Q | 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ3904-CUT TAPE | 制造商:FAIRCHILD 功能描述:MMPQ39 Series NPN 1 W 40 V 200 mA General Purpose Transistor - SOIC-16 |
| MMPQ3904R1 | 功能描述:兩極晶體管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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