參數(shù)資料
型號(hào)： MMPQ2907AD84Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 600 mA, 60 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： SOIC-16
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 88K
代理商： MMPQ2907AD84Z
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 50 mA, VCE = 20 V,
f = 100 MHz
250
MHz
Cobo
Output Capacitance
VCB = 10 V, IE = 0,
f = 100 kHz
6.0
pF
Cibo
Input Capacitance
VEB = 2.0 V, IC = 0,
f = 100 kHz
12
pF
SWITCHING CHARACTERISTICS
ton
Turn-on Time
VCC = 30 V, IC = 150 mA,
30
ns
td
Delay Time
IB1 = 15 mA
8.0
ns
tr
Rise Time
20
ns
toff
Turn-off Time
VCC = 6.0 V, IC = 150 mA
80
ns
ts
Storage Time
IB1 = IB2 = 15 mA
60
ns
tf
Fall Time
20
ns
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
V(BR)CEO
Collector-Emitter Breakdown
Voltage*
IC = 10 mA, IB = 0
60
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, IC = 0
5.0
V
IB
Base Cutoff Current
VCB = 30 V, VEB = 0.5 V
50
nA
ICEX
Collector Cutoff Current
VCE = 30 V, VBE = 0.5 V
50
nA
ICBO
Collector Cutoff Current
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 125
°C
0.02
20
A
hFE
DC Current Gain
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V*
IC = 500 mA, VCE = 10 V*
75
100
50
300
VCE(sat)
Collector-Emitter Saturation Voltage*
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.4
1.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA*
IC = 500 mA, IB = 50 mA
1.3
2.6
V
PNP Multi-Chip General Purpose Amplifier
(continued)
FFB2907A
/
FMB2907A
/
MMPQ2907A
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